Ranging device

A ranging device, comprising:

• a semiconductor layer having a first surface and a second surface opposite to the first surface;
• a lens provided on a side of the second surface of the semiconductor layer;
• first and second charge storage sections provided in the semiconductor layer on a side of the first surface of the semiconductor layer;
• a photoelectric conversion section that is in contact with the semiconductor layer on the side of the first surface of the semiconductor layer, the photoelectric conversion section including a material different from a material of the semiconductor layer;
• first and second voltage application sections that apply a voltage to the semiconductor layer between the first and second charge storage sections and the photoelectric conversion section;
• a first waveguide provided in the semiconductor layer so as to extend from the second surface of the semiconductor layer to the photoelectric conversion section, the first waveguide including a material different from the material of the semiconductor layer;
• and
• a second waveguide provided on the first waveguide on the side of the second surface of the semiconductor layer,
• wherein an area of a first end surface of the first waveguide on the side of the first surface of the semiconductor layer is greater than an area of a second end surface of the first waveguide on the side of the second surface of the semiconductor layer, and
• wherein an area of a third end surface of the second waveguide facing the second end surface of the first waveguide is smaller than an area of a fourth end surface of the second waveguide on a side opposite to the third end surface.

A ranging device, comprising:

• a semiconductor layer having a first surface and a second surface opposite to the first surface;
• a lens provided on a side of the second surface of the semiconductor layer;
• first and second charge storage sections provided in the semiconductor layer on a side of the first surface of the semiconductor layer;
• a photoelectric conversion section that is in contact with the semiconductor layer on the side of the first surface of the semiconductor layer, the photoelectric conversion section including a material different from a material of the semiconductor layer;
• first and second voltage application sections that apply a voltage to the semiconductor layer between the first and second charge storage sections and the photoelectric conversion section;
• a waveguide provided in the semiconductor layer so as to extend from the second surface of the semiconductor layer to the photoelectric conversion section, the waveguide including a material different from the material of the semiconductor layer,
• wherein the first voltage application section includes a first gate electrode that is provided on the first surface of the semiconductor layer between the first charge storage section and the photoelectric conversion section and that is insulated from the semiconductor layer, and
• wherein the second voltage application section includes a second gate electrode that is provided on the first surface of the semiconductor layer between the second charge storage section and the photoelectric conversion section and that is insulated from the semiconductor layer;
• a second wire provided on the side of the first surface of the semiconductor layer and connected to the first voltage application section;
• and
• a third wire provided on the side of the first surface of the semiconductor layer and connected to the second voltage application section.