US 2026/0282566 A1 · TWO-DIMENSIONAL PHOTOSENSOR AND MANUFACTURING METHOD OF TWO-DIMENSIONAL PHOTOSENSOR

Abstract

The present invention provides a two-dimensional photosensor which can be manufactured at a low cost in a thin film transistor factory and extends over a relatively wide two-dimensional plane. This two-dimensional photosensor comprises a plurality of arrayed photodiodes. The photodiodes each have a laminate of a first metal electrode, a first semiconductor layer, a first ohmic contact layer, and a first transparent electrode. The first semiconductor layer and the first ohmic contact layer are arranged between the first metal electrode and the first transparent electrode. This two-dimensional photosensor has a Schottky barrier at the interface between the first semiconductor layer and the first metal electrode, or at the interface between the first semiconductor layer and the first transparent electrode, and senses light incident thereon from the first transparent electrode side toward the first semiconductor layer.

Claims14

Dependent claims

A two-dimensional photosensor comprising:

a plurality of arrayed photodiodes,
wherein the photodiodes each include:
a first metal electrode;
a first semiconductor layer;
a first ohmic contact layer;
and
a first transparent electrode,
wherein the first semiconductor layer and the first ohmic contact layer are arranged between the first metal electrode and the first transparent electrode,
wherein a Schottky barrier is provided at an interface between the first semiconductor layer and the first metal electrode, or at an interface between the first semiconductor layer and the first transparent electrode, and
wherein the photosensor senses light incident from a side of the first transparent electrode toward the first semiconductor layer.

7 more elements

A manufacturing method of a two-dimensional photosensor,

the two-dimensional photosensor including
a plurality of arrayed photodiodes, and a readout circuit of signals from the photodiodes,
the photodiodes each including a laminate of
a first metal electrode,
a first semiconductor layer,
a first ohmic contact layer, and
a first transparent electrode,
wherein the first semiconductor layer and the first ohmic contact layer are arranged between the first metal electrode and the first transparent electrode,
a Schottky barrier is provided at an interface between the first semiconductor layer and the first metal electrode, or at an interface between the first semiconductor layer and the first transparent electrode,
the photosensor senses light incident from a side of the first transparent electrode toward the first semiconductor layer, and
the signal readout circuit includes a thin film transistor,
the method comprising a step of simultaneously forming at least one layer constituting the photodiode and the thin film transistor.

9 more elements

Dependencies are inferred from the claim text.

Two-dimensional photosensor and manufacturing method of two-dimensional photosensor

Life of this patent

Two-dimensional photosensor and manufacturing method of two-dimensional photosensor

Life of this patent

Abstract

Claims14