H10F 30/282
Insulated-gate field-effect transistors [igfet]
Official title: Insulated-gate field-effect transistors [IGFET], e.g. MISFET [metal-insulator-semiconductor field-effect transistor] phototransistors
H10F30/282 (Insulated-gate field-effect transistors [igfet]) appears on 336 US grants and 338 published applications in this corpus.
Search patents in H10F- Granted patents
- 336
- Published applications
- 338
- Assignees
- 216
- Inventors
- 879
- Latest grant
- 1 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 3 | 0 |
| 1978 | 1 | 0 |
| 1979 | 3 | 0 |
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 2 | 0 |
| 1983 | 0 | 0 |
| 1984 | 1 | 0 |
| 1985 | 2 | 0 |
| 1986 | 2 | 0 |
| 1987 | 3 | 0 |
| 1988 | 4 | 0 |
| 1989 | 3 | 0 |
| 1990 | 1 | 0 |
| 1991 | 4 | 0 |
| 1992 | 3 | 0 |
| 1993 | 3 | 0 |
| 1994 | 4 | 0 |
| 1995 | 2 | 0 |
| 1996 | 4 | 0 |
| 1997 | 2 | 0 |
| 1998 | 3 | 0 |
| 1999 | 2 | 0 |
| 2000 | 3 | 0 |
| 2001 | 1 | 0 |
| 2002 | 2 | 1 |
| 2003 | 1 | 0 |
| 2004 | 2 | 1 |
| 2005 | 1 | 2 |
| 2006 | 1 | 5 |
| 2007 | 2 | 8 |
| 2008 | 6 | 9 |
| 2009 | 1 | 7 |
| 2010 | 8 | 8 |
| 2011 | 6 | 11 |
| 2012 | 8 | 13 |
| 2013 | 8 | 12 |
| 2014 | 12 | 11 |
| 2015 | 16 | 16 |
| 2016 | 15 | 22 |
| 2017 | 16 | 13 |
| 2018 | 17 | 23 |
| 2019 | 17 | 27 |
| 2020 | 35 | 32 |
| 2021 | 22 | 23 |
| 2022 | 25 | 22 |
| 2023 | 16 | 17 |
| 2024 | 18 | 28 |
| 2025 | 14 | 16 |
| 2026 | 9 | 11 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Phototransistor, electronic device having the same, and method of manufacturing the phototransistor1 Sep 2026US 12,727,361 B2Industry-Academic Cooperation Foundation, Yonsei University
- Versatile anti-ambipolar phototransistors based on mixed-dimensional heterojunctions25 Aug 2026US 12,720,877 B2City University of Hong Kong
- Dielectric layer response-based field effect transistor photodetector7 Jul 2026US 12,677,485 B2Huazhong University of Science and Technology
- Semiconductor radiation detector16 Jun 2026US RE50,924 E1
- Photosensitive transistor, method for manufacturing a photosensitive transistor, and microfluidic chip9 Jun 2026US 12,652,868 B2Shanghai Tianma Microelectronics Co., Ltd.
- Photoelectric device based on quantum dots and its manufacturing method24 Sep 2026US 2026/0293332 A1University-Industry Cooperation Group of Kyung Hee University
- Unlocking high performance, ultra-low power van der waals transistors: towards back-end-of-line in- sensor machine vision16 Jul 2026US 2026/0206336 A1King Abdulaziz City for Science and Technology
- Realizing In-Sensor Visual Adaptation with Bio-Inspired Imaging Device4 Jun 2026US 2026/0156952 A1The Hong Kong Polytechnic University
- Frequency Down-Conversion Device and Communication Device23 Apr 2026US 2026/0110944 A1Tohok Uuniversity
- Infrared bolometer using semiconducting carbon nanotubes and method for manufacturing the same2 Apr 2026US 2026/0092815 A1NEC Corporation
Most cited
By later US patents
- Single-polysilicon CMOS active pixel147US 5,576,763 ALucent Technologies Inc. · 1996
- Solid state photo-electric converting device and solid state imaging apparatus employing it132US 4,363,963 ANippon Hoso Kyokai · 1982
- Photo-transistor in MOS thin-film technology and method for production and operation thereof78US 4,823,180 ASiemens Aktiengesellschaft · 1989
- Well to substrate photodiode for use in a CMOS sensor on a salicide process73US 6,040,592 AIntel Corporation · 2000
- Semiconductor device having a thin layer comprising germanium atoms as a matrix with a restricted range of hydrogen atom concentration72US 4,740,829 ACanon Kabushiki Kaisha · 1988