Dielectric layer response-based field effect transistor photodetector

A dielectric layer response-based field effect transistor photodetector, comprising:

• a gate, a photoelectric response composite dielectric layer, a carrier transport layer, a source, and a drain, wherein
• the photoelectric response composite dielectric layer is formed by compounding photoelectric response dielectric and charge blocking insulating dielectric, wherein
• the photoelectric response dielectric is used for absorbing light under illumination to generate electrons, holes, or excitons, the charge blocking insulating dielectric is used for limiting passage of the electrons, holes, and excitons, a structure of the photoelectric response composite dielectric layer satisfies the following:
• the charge blocking insulating dielectric confines the electrons, holes, and excitons within the photoelectric response dielectric, thereby preventing the electrons, holes, and excitons from leaving the photoelectric response composite dielectric layer, and further preventing the electrons, holes, and excitons from entering other components of the field effect transistor photodetector, and
• the carrier transport layer is used for transporting electrons or holes, the generation of photogenerated electrons, holes, or excitons in the photoelectric response composite dielectric layer and the movement of the photogenerated electrons, holes, or excitons limited within the photoelectric response dielectric cause an equivalent permittivity of the photoelectric response composite dielectric layer to change, so as to cause a change in carrier concentration and a change in conductivity of the carrier transport layer, and photoelectric detection is achieved according to a change in current between the source and the drain before and after illumination.