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US 12,727,361 B2Granted
Phototransistor, electronic device having the same, and method of manufacturing the phototransistor
AssigneesSamsung Display Co., Ltd., Industry-Academic Cooperation Foundation, Yonsei University
InventorsTaesang Kim, Hyun Jae Kim, Hyukjoon Yoo, Jun Hyung Lim
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Abstract
A phototransistor includes a gate electrode, a semiconductor layer disposed on the gate electrode, a gate insulating layer disposed between the gate electrode and the semiconductor layer, a source electrode, a drain electrode, and a porous layer disposed on the source electrode, the semiconductor layer, and the drain electrode, where a plurality of holes is defined in the porous layer.
Claims9
A phototransistor comprising:
- a gate electrode;
- a semiconductor layer disposed on the gate electrode;
- a gate insulating layer disposed between the gate electrode and the semiconductor layer;
- a source electrode disposed on the semiconductor layer;
- a drain electrode disposed on the semiconductor layer and spaced apart from the source electrode on the semiconductor layer;
- and
- a porous layer disposed on the source electrode, the semiconductor layer and the drain electrode, wherein a plurality of holes is defined through the porous layer to expose the semiconductor layer.
4 more elements
Dependencies are inferred from the claim text.