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US 4,740,829 AGranted
Semiconductor device having a thin layer comprising germanium atoms as a matrix with a restricted range of hydrogen atom concentration
AssigneeCanon Kabushiki Kaisha
InventorsTakashi Nakagiri, Yutaka Hirai, Yoshiyuki Osada
Life of this patent
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Abstract
A semiconductor device comprises a polycrystalline semiconductor thin film layer comprising germanium atoms as a matrix and containing 3 atomic % or less of hydrogen atoms.
Claims11
A semiconductor device which includes a polycrystalline semiconductor thin film layer comprising germanium atoms as a matrix and containing 0.01 to 3 atomic % of hydrogen atoms.
A thin film transistor comprising:
- a substrate;
- a polycrystalline semiconductor layer provided on said substrate comprising germanium atoms as a matrix and containing 0.01 to 3 atomic % of hydrogen atoms;
- a source region and a drain region provided internally of said semiconductor layer;
- an insulating layer provided at least on the semiconductor layer at the portion between these two regions;
- and
- a gate electrode provided on said insulating layer, a source electrode in electrical contact with the source region and a drain electrod in electrical contact with the drain region.
3 more elements
Dependencies are inferred from the claim text.