Infrared bolometer using semiconducting carbon nanotubes and method for manufacturing the same
AssigneeNEC Corporation
InventorTomo TANAKA
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Abstract
To reduce the resistance value of an infrared bolometer using semiconducting carbon nanotubes. An infrared bolometer comprising: a source electrode and a drain electrode arranged at a distance from each other; a carbon nanotube film, which is a light detection part, that is present between the two electrodes and that overlaps at least partially with and is in electrical contact with the two electrodes; and a gate electrode that is provided above or below the carbon nanotube film via an insulating film.
Claims10
An infrared bolometer comprising:
- a source electrode and a drain electrode arranged at a distance from each other;
- a carbon nanotube film, which is a light detection part, that is present between the two electrodes and that overlaps at least partially with and is in electrical contact with the two electrodes;
- and
- a gate electrode that is provided above or below the carbon nanotube film via an insulating film.
A method for manufacturing an infrared bolometer, comprising:
- preparing a substrate, at least a surface of the substrate on which an element is formed being insulating;
- forming a gate electrode on the substrate;
- forming a first insulating film on the gate electrode;
- and
- forming a carbon nanotube film on the first insulating film.
A method for manufacturing infrared bolometer comprising:
- preparing a substrate, at least a surface of the substrate on which an element is formed being insulating;
- forming a carbon nanotube film on the substrate;
- forming a second insulating film above the carbon nanotube film;
- and
- forming a gate electrode on the second insulating film.
Dependencies are inferred from the claim text.