Versatile anti-ambipolar phototransistors based on mixed-dimensional heterojunctions
AssigneeCity University of Hong Kong
InventorsChung Yin Johnny Ho, Wei Wang, Weijun Wang, You Meng
Life of this patent
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Abstract
Mixed-dimensional heterostructure nano-devices with multi-functionality for use in semiconductors. Specifically, a gate-tunable and anti-ambipolar phototransistor is devised based on 1D p-type GaAsSb nanowire/2D n-type MoS2 nanoflake mixed-dimensional van der Waals (vdW) heterojunctions. Methods of making the mixed-dimensional heterostructure nano-devices with multi-functionality, gate-tunability and anti-ambipolar phototransistor.
Claims20
A phototransistor based on a mixed-dimensional heterojunction device, comprising:
- at least one substrate layer;
- at least one nanowire positioned on a portion of the at least one substrate layer, wherein the at least one nanowire is at least one of ternary and quaternary;
- at least one first contact positioned over at least a portion of the at least one substrate layer and at least a portion of the at least one nanowire;
- a nanoflake positioned on at least a portion of the at least one substrate layer and at least a portion of the at least one nanowire;
- and
- at least one second contact positioned on at least a portion of the at least one substrate layer and at least a portion of the nanoflake;
- wherein the phototransistor is configured to provide anti-ambipolar behavior.
A method of forming phototransistor based on a mixed-dimensional heterojunction device comprising:
- obtaining a substrate;
- obtaining a prepared nanowire;
- transferring the nanowire onto the substrate, wherein the nanowire is at least one of ternary and quaternary;
- depositing a first contact over the substrate and at least a portion of the nanowire;
- forming nanoflake over a portion of the substrate and a portion of the nanowire;
- and
- depositing a second contact over the substrate and at least a portion of the nanoflake;
- wherein the phototransistor is configured to provide anti-ambipolar behavior.
Dependencies are inferred from the claim text.