Photosensitive transistor, method for manufacturing a photosensitive transistor, and microfluidic chip

A microfluidic chip, comprising a plurality of pixel regions arranged in rows and columns;

• at least one microfluidic electrode, wherein each of the at least one microfluidic electrode is located in a pixel region of the plurality of pixel regions on a side of a substrate and is configured to drive a liquid drop to move;
• and
• at least one photosensitive transistor, wherein each photosensitive transistor of the at least one photosensitive transistor is located in a pixel region of the plurality of pixel regions on the side of the substrate;
• wherein the each photosensitive transistor comprises the substrate and a first semiconductor layer, a first gate, a first electrode, a second electrode and a second semiconductor layer which are located on the side of the substrate, wherein
• the first semiconductor layer comprises a first doped region, a second doped region and a channel region, and the channel region is located between the first doped region and the second doped region;
• the first electrode is electrically connected to the first doped region, the second electrode is electrically connected to the second doped region, and in a direction perpendicular to the substrate, the first gate is insulated from and overlaps the channel region;
• the second semiconductor layer is in direct contact with the channel region, and an area of the second semiconductor layer is less than an area of the first semiconductor layer;
• the photosensitive transistor comprises a main region and opening regions, and the opening regions are located at a periphery of the main region;
• the first electrode and the second electrode are in a same layer and insulated from each other and both surround the main region;
• and a region between an end portion of the first electrode and the second electrode and a region between an end portion of the second electrode and the first electrode each form an opening region of the opening regions;
• and
• the second semiconductor layer comprises a main body portion and auxiliary portions, wherein the main body portion is located in the main region, and each of the auxiliary portions is located in an opening region of the opening regions;
• wherein the each photosensitive transistor further comprises a second gate, the second gate is located on a side of the first semiconductor layer away from the first gate, and the second gate is transparent in a visible spectrum.