H10D 84/957
Sos or soi technology
Official title: {SOS or SOI technology}
H10D84/957 (Sos or soi technology) appears on 6 US grants and 7 published applications in this corpus.
Search patents in H10D- Granted patents
- 6
- Published applications
- 7
- Assignees
- 4
- Inventors
- 14
- Latest grant
- 7 Jul 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2013 | 1 | 0 |
| 2014 | 0 | 0 |
| 2015 | 0 | 0 |
| 2016 | 1 | 0 |
| 2017 | 0 | 0 |
| 2018 | 0 | 0 |
| 2019 | 0 | 1 |
| 2020 | 0 | 0 |
| 2021 | 0 | 1 |
| 2022 | 1 | 1 |
| 2023 | 0 | 0 |
| 2024 | 1 | 1 |
| 2025 | 1 | 2 |
| 2026 | 1 | 1 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Area-efficient fully depleted semiconductor-on-insulator structure with mixed threshold voltage transistors7 Jul 2026US 12,677,477 B2GLOBALFOUNDRIES U. S. Inc.
- RFSOI semiconductor structures including a nitrogen-doped charge-trapping layer and methods of manufacturing the same19 Aug 2025US 12,396,222 B2Taiwan Semiconductor Manufacturing Company.Ltd
- RFSOI semiconductor structures including a nitrogen-doped charge-trapping layer and methods of manufacturing the same14 May 2024US 11,984,477 B2Taiwan Semiconductor Manufacturing Company.Ltd
- RFSOI semiconductor structures including a nitrogen-doped charge-trapping layer and methods of manufacturing the same14 Jun 2022US 11,362,176 B2Taiwan Semiconductor Manufacturing Company.Ltd
- High density and modular CMOS logic based on 3D stacked, independent-gate, junctionless FinFETs6 Dec 2016US 9,515,088 B1Globalfoundries Inc.
- Area-efficient fully depleted semiconductor-on-insulator structure with mixed threshold voltage transistors10 Sep 2026US 2026/0271398 A1GLOBALFOUNDRIES U. S. Inc.
- Rfsoi semiconductor structures including a nitrogen-doped charge-trapping layer and methods of manufacturing the same20 Nov 2025US 2025/0359206 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Area-efficient fully depleted semiconductor-on-insulator structure with mixed threshold voltage transistors10 Apr 2025US 2025/0120175 A1GLOBALFOUNDRIES U. S. Inc.
- Rfsoi semiconductor structures including a nitrogen-doped charge-trapping layer and methods of manufacturing the same15 Aug 2024US 2024/0274659 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Rfsoi semiconductor structures including a nitrogen-doped charge-trapping layer and methods of manufacturing the same6 Oct 2022US 2022/0320277 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Planar compatible FDSOI design architecture15US 8,443,306 B1Taiwan Semiconductor Manufacturing Company.Ltd · 2013
- RFSOI semiconductor structures including a nitrogen-doped charge-trapping layer and methods of manufacturing the same2US 11,984,477 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2024
- High density and modular CMOS logic based on 3D stacked, independent-gate, junctionless FinFETs1US 9,515,088 B1Globalfoundries Inc. · 2016