High density and modular CMOS logic based on 3D stacked, independent-gate, junctionless FinFETs
AssigneeGlobalfoundries Inc.
InventorMurat Kerem Akarvardar
Life of this patent
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Abstract
A semiconductor structure is provided with fins on a substrate, including: a first active layer with a first source, first channel, and first drain, each doped with the same concentration of dopant as each other; a dielectric layer on the first active layer; a second active layer with a second source, second channel, and second drain, each doped with the same concentration of dopant as each other; and a first and second gate disposed on an opposing first and second sidewall of the channels, respectively. A method for making such a semiconductor structure is also provided.
Claims20
A semiconductor structure comprising
- one or more fins disposed on a substrate, wherein the one or more fins comprise:
- a first active layer disposed on said substrate comprising a first source, a first channel, and a first drain, wherein the first source, first channel, and first drain are doped with a concentration of a first dopant and the concentration of the first dopant is the same in the first channel as it is in the first source and the first drain;
- a dielectric layer disposed on the first active layer;
- a second active layer disposed on the dielectric layer comprising a second source, a second channel, and a second drain, wherein the second source, second channel, and second drain are doped with a concentration of a second dopant and the concentration of the second dopant is the same in the second channel as it is in the second source and the second drain;
- a first gate disposed on a first sidewall of the first channel and of the second channel;
- and
- a second gate disposed on a second sidewall of the first channel and of the second channel wherein the second sidewall is opposite the first sidewall.
A method of making a semiconductor structure comprising:
- disposing a first active layer on a semiconductor substrate and doping the first active layer with a first dopant;
- disposing a sacrificial layer on the first active layer wherein the sacrificial layer comprises an oxidizable material;
- disposing a second active layer on the sacrificial layer and doping the second active layer with a second dopant;
- etching the first active layer, the sacrificial layer, and the second active layer wherein etching comprises forming one or more fins;
- oxidizing the sacrificial layer wherein oxidizing comprises transforming the sacrificial layer into a dielectric layer;
- disposing a first gate on a first sidewall of the one or more fins and a second gate on a second sidewall of the one or more fins wherein the first gate is opposite the second gate;
- and
- wherein disposing comprises forming a first source, a first channel, and a first drain in the first active layer having a concentration of the first dopant that does not substantially differ between the first source, first channel, and first drain, and a second source, a second channel, and a second drain in the second active layer having a concentration of the second dopant that does not substantially differ between the second source, second channel, and second drain.
Dependencies are inferred from the claim text.