Rfsoi semiconductor structures including a nitrogen-doped charge-trapping layer and methods of manufacturing the same

A method of forming a semiconductor-on-insulator (SOI) substrate, comprising:

• forming a polysilicon layer on a handle substrate;
• implanting nitrogen atoms into the polysilicon layer in a plurality of implantation processes to form a nitrogen-doped polysilicon layer having a substantially uniform concentration of the nitrogen atoms;
• forming an insulating layer on the nitrogen-doped polysilicon layer;
• and
• attaching a semiconductor layer to the insulating layer.

A method of forming a semiconductor-on-insulator (SOI) substrate, comprising:

• forming a polysilicon layer on a handle substrate;
• implanting nitrogen atoms into the polysilicon layer in a plurality of implantation processes to form a nitrogen-doped polysilicon layer having a substantially uniform concentration of the nitrogen atoms;
• annealing the nitrogen-doped polysilicon layer at a temperature in a range from 600° C. to 1,050° C. for a duration in a range from 10 seconds to 120 minutes;
• after the annealing of the nitrogen-doped polysilicon layer, oxidizing a surface of the nitrogen-doped polysilicon layer to form a thermal silicon oxide layer on the nitrogen-doped polysilicon layer;
• and
• attaching a semiconductor layer to the thermal silicon oxide layer, comprising:
• bonding a source substrate comprising the semiconductor layer to the thermal silicon oxide layer by semiconductor-to-oxide bonding;
• and
• separating the semiconductor layer from a remaining portion of the source substrate.