H10D 64/205
Nanosized electrodes
Official title: {Nanosized electrodes, e.g. nanowire electrodes}
H10D64/205 (Nanosized electrodes) appears on 310 US grants and 359 published applications in this corpus.
Search patents in H10D- Granted patents
- 310
- Published applications
- 359
- Assignees
- 161
- Inventors
- 808
- Latest grant
- 15 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2002 | 0 | 1 |
| 2003 | 0 | 1 |
| 2004 | 2 | 1 |
| 2005 | 0 | 1 |
| 2006 | 0 | 0 |
| 2007 | 1 | 1 |
| 2008 | 1 | 4 |
| 2009 | 1 | 4 |
| 2010 | 0 | 4 |
| 2011 | 5 | 9 |
| 2012 | 5 | 10 |
| 2013 | 12 | 27 |
| 2014 | 21 | 37 |
| 2015 | 28 | 51 |
| 2016 | 36 | 45 |
| 2017 | 40 | 26 |
| 2018 | 30 | 30 |
| 2019 | 36 | 19 |
| 2020 | 27 | 23 |
| 2021 | 12 | 15 |
| 2022 | 15 | 18 |
| 2023 | 11 | 10 |
| 2024 | 11 | 10 |
| 2025 | 12 | 11 |
| 2026 | 4 | 1 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Structure and field effect transistor15 Sep 2026US 12,740,218 B2Murata Manufacturing Co., Ltd.
- Semiconductor device and semiconductor memory device2 Jun 2026US 12,648,183 B2Kioxia Corporation
- Device scaling by isolation enhancement26 May 2026US 12,641,825 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Accumulation gate for quantum device21 Apr 2026US 12,610,575 B2Nederlandse Organisatie voor toegepast-natuurwetenschappelijk onderzoek TNO
- Nanostructure platform for cellular interfacing and corresponding fabrication method9 Dec 2025US 12,493,014 B2Centre National De La Recherche Scientifique
- Semiconductor device and semiconductor memory device17 Sep 2026US 2026/0282452 A1Kioxia Corporation
- Contact over active gate structures with widened and lower capacitance insulating cap layers for advanced integrated circuit structure fabrication18 Dec 2025US 2025/0386578 A1Intel Corporation
- Device scaling by isolation enhancement27 Nov 2025US 2025/0366027 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Microelectronic devices and related methods and memory devices9 Oct 2025US 2025/0318113 A1Micron Technology, Inc.
- Semiconductor device and electronic apparatus including the same3 Jul 2025US 2025/0220977 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Methods of nanotubes films and articles208US 7,264,990 B2Nantero, Inc. · 2007
- Methods of nanotube films and articles158US 6,835,591 B2Nantero, Inc. · 2004
- Non-volatile memory device having nanocrystal floating gate and method of fabricating same148US 9,899,398 B1Taiwan Semiconductor Manufacturing Company.Ltd · 2018
- Metal gate of gate-all-around transistor142US 9,786,774 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- Nanowire-based transparent conductors and applications thereof72US 8,094,247 B2Cambrios Technologies Corporation · 2012