H10D 64/01358
The insulator being formed after the semiconductor body, the semiconductor being a
Official title: {the insulator being formed after the semiconductor body, the semiconductor being a Group III-V material}
H10D64/01358 (The insulator being formed after the semiconductor body, the semiconductor being a) appears on 438 US grants and 457 published applications in this corpus.
Search patents in H10D- Granted patents
- 438
- Published applications
- 457
- Assignees
- 165
- Inventors
- 846
- Latest grant
- 16 Jun 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1979 | 1 | 0 |
| 1980 | 1 | 0 |
| 1981 | 1 | 0 |
| 1982 | 1 | 0 |
| 1983 | 1 | 0 |
| 1984 | 2 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 1 | 0 |
| 1989 | 2 | 0 |
| 1990 | 2 | 0 |
| 1991 | 3 | 0 |
| 1992 | 2 | 0 |
| 1993 | 2 | 0 |
| 1994 | 1 | 0 |
| 1995 | 4 | 0 |
| 1996 | 4 | 0 |
| 1997 | 1 | 0 |
| 1998 | 1 | 0 |
| 1999 | 5 | 0 |
| 2000 | 4 | 0 |
| 2001 | 7 | 1 |
| 2002 | 5 | 4 |
| 2003 | 4 | 4 |
| 2004 | 5 | 5 |
| 2005 | 2 | 4 |
| 2006 | 1 | 6 |
| 2007 | 6 | 10 |
| 2008 | 4 | 6 |
| 2009 | 2 | 8 |
| 2010 | 4 | 7 |
| 2011 | 6 | 11 |
| 2012 | 8 | 12 |
| 2013 | 15 | 45 |
| 2014 | 27 | 45 |
| 2015 | 34 | 37 |
| 2016 | 56 | 46 |
| 2017 | 38 | 36 |
| 2018 | 33 | 37 |
| 2019 | 34 | 34 |
| 2020 | 33 | 24 |
| 2021 | 21 | 22 |
| 2022 | 17 | 13 |
| 2023 | 13 | 10 |
| 2024 | 9 | 14 |
| 2025 | 14 | 12 |
| 2026 | 1 | 4 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Selective gate oxide formation on 2D material based transistor devices16 Jun 2026US 12,660,272 B2Intel Corporation
- Vertical gallium nitride containing field effect transistor with silicon nitride passivation and gate dielectric regions30 Dec 2025US 12,512,312 B1Power Integrations, Inc.
- Semiconductor device having improved p-type doped nitride-based semiconductor layer and method for manufacturing the same2 Dec 2025US 12,490,482 B2Innoscience (Suzhou) Technology Co., Ltd.
- Semiconductor power device and method for producing same11 Nov 2025US 12,469,704 B2Rohm Co., Ltd.
- Insulated gate structure, wide bandgap material power device with the same and manufacturing method thereof23 Sep 2025US 12,426,343 B2Hitachi Energy Switzerland AG
- Epitaxial nitride ferroelectronic devices30 Jul 2026US 2026/0223414 A1The Regents of the University of Michigan
- Semiconductor structure and forming method thereof12 Mar 2026US 2026/0075919 A1National Tsing Hua University
- Vertical gallium nitride containing field effect transistor with silicon nitride passivation and gate dielectric regions5 Mar 2026US 2026/0068559 A1Power Integrations, Inc.
- Semiconductor power device and method for producing same5 Feb 2026US 2026/0040644 A1Rohm Co., Ltd.
- Method for forming a semiconductor structure, method for depositing a dipole layer on a substrate, and associated methods for forming a gate structure for a semiconductor device4 Dec 2025US 2025/0369110 A1ASM IP Holding B. V.
Most cited
By later US patents
- Semiconductor device having an MIS structure558US 5,616,947 AMatsushita Electric Industrial Co., Ltd. · 1997
- High performance gaas devices and method497US 5,436,499 ASpire Corporation · 1995
- Sulfur-containing thin films479US 9,245,742 B2ASM IP Holding B. V. · 2016
- Film forming method, semiconductor device, manufacturing method thereof and substrate processing apparatus therefor470US 8,785,311 B2Tokyo Electron Limited · 2014
- Substrate processing apparatus469US 8,999,102 B2Tokyo Electron Limited · 2015