H10D 62/84
Being selenium or tellurium only
Official title: being selenium or tellurium only
H10D62/84 (Being selenium or tellurium only) appears on 44 US grants and 74 published applications in this corpus.
Search patents in H10D- Granted patents
- 44
- Published applications
- 74
- Assignees
- 34
- Inventors
- 216
- Latest grant
- 15 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 0 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 1 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 1 |
| 2003 | 0 | 0 |
| 2004 | 0 | 0 |
| 2005 | 0 | 1 |
| 2006 | 0 | 0 |
| 2007 | 1 | 8 |
| 2008 | 0 | 1 |
| 2009 | 2 | 0 |
| 2010 | 2 | 3 |
| 2011 | 1 | 1 |
| 2012 | 2 | 3 |
| 2013 | 1 | 4 |
| 2014 | 3 | 4 |
| 2015 | 3 | 0 |
| 2016 | 1 | 3 |
| 2017 | 1 | 2 |
| 2018 | 3 | 2 |
| 2019 | 2 | 1 |
| 2020 | 1 | 4 |
| 2021 | 4 | 4 |
| 2022 | 0 | 0 |
| 2023 | 3 | 10 |
| 2024 | 0 | 10 |
| 2025 | 2 | 10 |
| 2026 | 10 | 2 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Ultra-scaled transistor devices to enable cell size scaling15 Sep 2026US 12,740,115 B2Intel Corporation
- Semiconductor device comprising two-dimensional material and method of manufacturing the semiconductor device1 Sep 2026US 12,727,220 B2Research & Business Foundation Sungkyunkwan University
- Nonvolatile memory device with reduced lateral charge11 Aug 2026US 12,706,146 B2Samsung Electronics Co., Ltd.
- Method for manufacturing tellurium-based semiconductor device, tellurium-based semiconductor device manufactured thereby, and thin film transistor23 Jun 2026US 12,666,655 B2Iucf-Hyu (Industry-University Cooperation Foundation Hanyang University)
- Stacked multi-gate device with barrier layers19 May 2026US 12,635,159 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure26 Feb 2026US 2026/0059804 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Selective laser treatments for transition metal dichalcogenide based transistor structures1 Jan 2026US 2026/0006877 A1Intel Corporation
- Method for manufacturing semiconductor wafers18 Dec 2025US 2025/0381707 A1Denso Corporation
- Stacked multi-gate device with barrier layers20 Nov 2025US 2025/0359173 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and formation method thereof8 May 2025US 2025/0151353 A1National Taiwan University
Most cited
By later US patents
- Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices77US 7,211,464 B2President and Fellows of Harvard College · 2007
- Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices22US 7,666,708 B2President and Fellows of Harvard College · 2010
- LED light disposed on a flexible substrate and connected with a printed 3D conductor20US 8,471,274 B2Heilux, LLC · 2013
- Display panel15US 10,840,478 B2Samsung Display Co., Ltd. · 2020
- Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices15US 7,476,596 B2President and Fellows of Harvard College · 2009