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US 2025/0151353 A1Published application
Semiconductor device and formation method thereof
AssigneesTaiwan Semiconductor Manufacturing Company, Ltd., National Taiwan University
InventorsChao-Hsin Wu, Yu Ting Chao, Yu-Hsuan Lu, Ying-Chuan Chen
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Abstract
A method of forming a semiconductor device includes the following steps. A 2D material layer is formed over a bottom metal layer. A top metal layer is formed over the 2D material layer. An oxidation treatment is performed to the 2D material layer to form an oxide region interfacing both the 2D material layer and the top metal layer.
Claims20
A method of forming a semiconductor device, comprising:
- forming a 2D material layer over a bottom metal layer;
- forming a top metal layer over the 2D material layer;
- and
- performing an oxidation treatment to the 2D material layer, to form an oxide region interfacing both the 2D material layer and the top metal layer.
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A method of forming a semiconductor device, comprising:
- depositing a metal layer over a 2D material layer;
- patterning the metal layer to form a patterned metal layer covering a first portion of the 2D material layer, while leaving a second portion of the 2D material layer exposed;
- and
- selectively oxidizing the first portion of the 2D material layer to form an oxidized region, while leaving at least a region of the second portion of the 2D material layer un-oxidized.
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A semiconductor device, comprising:
- a substrate;
- a first metal layer over the substrate;
- a first oxide layer over the first metal layer, wherein the first oxide layer wraps around the first metal layer when viewed from a cross-sectional view;
- a 2D material layer over the first oxide layer and extending across the first metal layer such that the 2D material layer is on opposite sides of the first metal layer, wherein the 2D material layer is a semiconductor;
- a second oxide layer over the 2D material layer;
- and
- a second metal layer over the second oxide layer.
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Dependencies are inferred from the claim text.