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US 12,706,146 B2Granted
Nonvolatile memory device with reduced lateral charge
AssigneeSamsung Electronics Co., Ltd.
InventorsSeyun Kim, Kyunghun Kim, Sunho Kim, Hyungyung Kim, Seungyeul Yang, Gukhyon Yon, Minhyun Lee, Joonsuk Lee, Seokhoon Choi, Hoseok Heo
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Abstract
Provided is a nonvolatile memory device. The nonvolatile memory device includes: a channel layer; a plurality of gate electrodes and a plurality of insulating layers being spaced apart from the channel layer and being alternately arranged; a charge trap layer between the channel layer and a gate electrode, and a charge tunneling layer between the channel layer and the charge trap layer.
Claims20
A nonvolatile memory device comprising:
- a channel layer extending in a first direction;
- a plurality of gate electrodes and a plurality of insulating layers that are spaced apart from the channel layer and being alternately arranged in the first direction;
- a charge trap layer between the channel layer and the plurality of gate electrodes;
- and
- a charge tunneling layer between the channel layer and the charge trap layer,
- wherein the charge trap layer comprises a two-dimensional material, and the two-dimensional material comprises a crystalline structure having atoms arranged in an x-y plane that is inclined with respect to a surface of the channel layer.
3 more elements
A nonvolatile memory device comprising:
- a channel layer extending in a first direction;
- a plurality of gate electrodes and a plurality of insulating lavers that are spaced apart from the channel layer and being alternately arranged in the first direction;
- a charge trap layer between the channel layer and the plurality of gate electrodes;
- and
- a charge tunneling layer between the channel layer and the charge trap layer,
- wherein the charge trap layer comprises a two-dimensional material, and the two-dimensional material comprises a crystalline structure that is inclined with respect to the channel layer,
- wherein the charge trap layer comprises a region having the crystalline structure in which an angle formed between an x-y plane of the two-dimensional material and the channel layer is greater than or equal to 45 degrees and less than or equal to 90 degrees.
4 more elements
A nonvolatile memory device comprising:
- a channel layer extending in a first direction;
- a plurality of gate electrodes and a plurality of insulating lavers that are spaced apart from the channel layer and being alternately arranged in the first direction;
- a charge trap layer between the channel layer and the plurality of gate electrodes;
- and
- a charge tunneling layer between the channel layer and the charge trap laver,
- wherein the charge trap layer comprises a two-dimensional material, and the two-dimensional material comprises a crystalline structure that is inclined with respect to the channel layer, wherein
- the two-dimensional material comprises Mxene.
4 more elements
Dependencies are inferred from the claim text.