H10D 30/6759
Silicon-on-sapphire [sos] substrates
Official title: {Silicon-on-sapphire [SOS] substrates}
H10D30/6759 (Silicon-on-sapphire [sos] substrates) appears on 110 US grants and 50 published applications in this corpus.
Search patents in H10D- Granted patents
- 110
- Published applications
- 50
- Assignees
- 40
- Inventors
- 152
- Latest grant
- 6 Jan 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 3 | 0 |
| 1977 | 2 | 0 |
| 1978 | 5 | 0 |
| 1979 | 1 | 0 |
| 1980 | 4 | 0 |
| 1981 | 2 | 0 |
| 1982 | 4 | 0 |
| 1983 | 3 | 0 |
| 1984 | 1 | 0 |
| 1985 | 3 | 0 |
| 1986 | 2 | 0 |
| 1987 | 4 | 0 |
| 1988 | 2 | 0 |
| 1989 | 2 | 0 |
| 1990 | 2 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 1 | 0 |
| 1994 | 0 | 0 |
| 1995 | 2 | 0 |
| 1996 | 2 | 0 |
| 1997 | 4 | 0 |
| 1998 | 1 | 0 |
| 1999 | 9 | 0 |
| 2000 | 3 | 0 |
| 2001 | 2 | 0 |
| 2002 | 2 | 4 |
| 2003 | 3 | 1 |
| 2004 | 4 | 2 |
| 2005 | 0 | 6 |
| 2006 | 1 | 7 |
| 2007 | 6 | 2 |
| 2008 | 0 | 0 |
| 2009 | 2 | 0 |
| 2010 | 2 | 1 |
| 2011 | 2 | 1 |
| 2012 | 1 | 2 |
| 2013 | 0 | 0 |
| 2014 | 1 | 1 |
| 2015 | 2 | 4 |
| 2016 | 0 | 2 |
| 2017 | 5 | 2 |
| 2018 | 2 | 1 |
| 2019 | 1 | 5 |
| 2020 | 4 | 5 |
| 2021 | 3 | 1 |
| 2022 | 1 | 1 |
| 2023 | 1 | 0 |
| 2024 | 2 | 2 |
| 2025 | 0 | 0 |
| 2026 | 1 | 0 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Method and apparatus improving gate oxide reliability by controlling accumulated charge6 Jan 2026US 12,520,525 B2pSemi Corporation
- Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction27 Aug 2024US 12,074,217 B2pSemi Corporation
- Method and apparatus improving gate oxide reliability by controlling accumulated charge13 Feb 2024US 11,901,459 B2pSemi Corporation
- Display device having an electric field infibition film14 Mar 2023US 11,605,690 B2Japan Display Inc.
- Recessed channel structure in FDSOI26 Apr 2022US 11,316,026 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Method and apparatus for use in improving linearity of mosfets using an accumulated charge sink-harmonic wrinkle reduction19 Dec 2024US 2024/0421227 A1pSemi Corporation
- Method and apparatus improving gate oxide reliability by controlling accumulated charge8 Aug 2024US 2024/0266441 A1pSemi Corporation
- Method and apparatus improving gate oxide reliability by controlling accumulated charge9 Jun 2022US 2022/0181497 A1pSemi Corporation
- Method and apparatus for use in improving linearity of mosfets using an accumulated charge sink-harmonic wrinkle reduction14 Oct 2021US 2021/0320206 A1pSemi Corporation
- Method and apparatus improving gate oxide reliability by controlling accumulated charge22 Oct 2020US 2020/0335633 A1pSemi Corporation
Most cited
By later US patents
- Lanthanide oxide / hafnium oxide dielectric layers627US 7,192,824 B2Micron Technology, Inc. · 2007
- Lanthanide oxide / hafnium oxide dielectric layers601US 7,312,494 B2Micron Technology, Inc. · 2007
- Semiconductor devices and method for making the same149US 4,969,031 AHitachi, Ltd. · 1990
- Minimum charge FET fabricated on an ultrathin silicon on sapphire wafer143US 5,600,169 APeregrine Semiconductor Corporation · 1997
- Deep depletion insulated gate field effect transistors138US 3,958,266 ARCA Corporation · 1976