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US 12,074,217 B2Granted
Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction
AssigneepSemi Corporation
InventorsChristopher N. Brindle, Jie Deng, Alper Genc, Chieh-Kai Yang
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Abstract
A method and apparatus for use in improving linearity sensitivity of MOSFET devices having an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to address degradation in second- and third-order intermodulation harmonic distortion at a desired range of operating voltage in devices employing an accumulated charge sink.
Claims44
An accumulated charge control (ACC) transistor comprising:
- a gate;
- a drain;
- a source;
- a body, wherein the ACC transistor is configured to selectively operate in an on state or an off state, and wherein the ACC transistor is a metal-oxide-semiconductor field effect transistor;
- a first accumulated charge sink (ACS) region coupled to the body at a first side of the body and configured to control, via the first ACS region, charge accumulated within the body of the ACC transistor during at least a portion of the off state to improve a linearity of the ACC transistor;
- a second ACS region coupled to the body at a second side of the body opposite the first side and configured to control, via the second ACS region, the charge accumulated within the body of the ACC transistor during at least the portion of the off state to improve the linearity of the ACC transistor, wherein the charge accumulated within the body is associated with carriers having a polarity opposite a polarity of carriers in the drain and the source when the ACC transistor is operated in the on state;
- and
- a structure coupled to the first ACS region and the second ACS region.
5 more elements
A method for controlling accumulated charge in a transistor, the method comprising:
- controlling charge accumulated within a body of the transistor during at least a portion of an off state of the transistor via a first accumulated charge sink (ACS) region of the transistor coupled to the body at a first side of the body to improve a linearity of the transistor, wherein the transistor is a metal-oxide-semiconductor field effect transistor;
- and
- controlling the charge accumulated within the body during at least the portion of the off state of the transistor via a second ACS region coupled to the body at a second side of the body opposite the first side to improve the linearity of the transistor, wherein the charge accumulated within the body is associated with carriers having a polarity opposite a polarity of carriers in a drain of the transistor and a source of the transistor when the transistor is operated in the on state, wherein the first ACS region and the second ACS region are coupled via a structure.
Dependencies are inferred from the claim text.