H01S 5/34386
Explicitly al-free
Official title: {explicitly Al-free}
H01S5/34386 (Explicitly al-free) appears on 42 US grants and 39 published applications in this corpus.
Search patents in H01S- Granted patents
- 42
- Published applications
- 39
- Assignees
- 23
- Inventors
- 64
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2000 | 1 | 0 |
| 2001 | 0 | 1 |
| 2002 | 2 | 4 |
| 2003 | 5 | 4 |
| 2004 | 4 | 3 |
| 2005 | 1 | 1 |
| 2006 | 2 | 2 |
| 2007 | 3 | 4 |
| 2008 | 1 | 1 |
| 2009 | 3 | 2 |
| 2010 | 2 | 1 |
| 2011 | 3 | 0 |
| 2012 | 0 | 0 |
| 2013 | 0 | 0 |
| 2014 | 0 | 0 |
| 2015 | 1 | 0 |
| 2016 | 3 | 2 |
| 2017 | 1 | 1 |
| 2018 | 1 | 1 |
| 2019 | 3 | 1 |
| 2020 | 1 | 0 |
| 2021 | 0 | 1 |
| 2022 | 1 | 2 |
| 2023 | 0 | 4 |
| 2024 | 0 | 3 |
| 2025 | 1 | 0 |
| 2026 | 3 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Photonic crystal surface light-emitting laser element6 Oct 2026US 12,756,157 B2Kyoto University
- Wavelength tunable laser device and method of manufacturing the same15 Sep 2026US 12,738,711 B2Sumitomo Electric Industries, Ltd.
- Semiconductor laser element and method of producing semiconductor laser element5 May 2026US 12,620,770 B2Sony Group Corporation
- Laser emitter including nanowires8 Jul 2025US 12,355,214 B2Microsoft Technology Licensing, LLC
- Laser emitter including nanowires14 Jun 2022US 11,362,487 B2Microsoft Technology Licensing, LLC
- Multiple quantum well structure, semiconductor laser and manufacturing method for multiple quantum well structure7 May 2026US 2026/0128571 A1Nippon Telegraph and Telephone Corporation
- Interband Cascade Lasers with Improved Voltage Efficiency26 Dec 2024US 2024/0429685 A1The Board of Regents of the University of Oklahoma
- Wavelength tunable laser device and method of manufacturing the same30 May 2024US 2024/0178634 A1Sumitomo Electric Industries, Ltd.
- Control method and control device of wavelength tunable laser device, and non-transitory storage medium storing control program of wavelength tunable laser device30 May 2024US 2024/0178635 A1Sumitomo Electric Industries, Ltd.
- High-power edge-emitting semiconductor laser with asymmetric structure30 Nov 2023US 2023/0387665 A1Arima Lasers Corp.
Most cited
By later US patents
- Light-emitting semiconductor device producing red wavelength optical radiation81US 6,542,528 B1Ricoh Company, Ltd. · 2003
- Vertical-cavity, surface-emission type laser diode and fabrication process thereof63US 6,674,785 B2Ricoh Company, Ltd. · 2004
- High power laterally antiguided semiconductor light source with reduced transverse optical confinement38US 6,167,073 AWisconsin Alumni Research Foundation · 2000
- Magnesium based gettering regions for gallium and nitrogen containing laser diode devices17US 8,964,807 B1Soraa Laser Diode, Inc. · 2015
- Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system12US 7,180,100 B2Ricoh Company, Ltd. · 2007