Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system
AssigneeRicoh Company, Ltd.
InventorsTakashi Takahashi, Morimasa Kaminishi, Shunichi Sato, Akihiro Itoh, Naoto Jikutani
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Abstract
A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorporated into said active layer together with Al is set to a level such that said semiconductor light-emitting device can perform a continuous laser oscillation at room temperature.
Claims1
A semiconductor light emitting device having a p-type semiconductor layer between an active layer containing nitrogen and a semiconductor substrate, a selective oxidizing layer containing AlAs as a major component disposed in said p-type semiconductor layer, and a current confinement structure is formed by oxidizing a part of said disposed selective oxidizing layer, wherein said active layer containing nitrogen has an oxygen concentration of 1×1018 cm−3 or less.
Dependencies are inferred from the claim text.