High-power edge-emitting semiconductor laser with asymmetric structure

A high-power edge-emitting semiconductor laser with asymmetric structure, comprising:

• a substrate layer 10, the material is n-type gallium arsenide (n-GaAs);
• a lower cladding layer 14, the material is n-type aluminum gallium indium phosphide (n-AlxGal-xInP, x is 0.2˜0.4)and formed on the substrate layer 10;
• a lower optical waveguide layer 16, the material is gallium indium phosphide (GalnP) and formed on the lower cladding layer 14;
• a first lower barrier layer 18, the material is gallium arsenide phosphide (GaAsP) and formed on the lower optical waveguide layer 16;
• a quantum well layer 22, the material is indium gallium arsenide (InGaAs) and formed on the first lower barrier layer 18;
• a first upper barrier layer 26, the material is gallium arsenide phosphide (GaAsP) and formed on the quantum well layer 22;
• an upper optical waveguide layer 28, the material is gallium indium phosphide (GalnP) and formed on the first upper barrier layer 26, and make the thickness of the upper optical waveguide layer 28 be below 300 nm, the thickness of the upper optical waveguide layer 28 is ⅓˜½ of the thickness of the lower optical waveguide layer 16;
• an upper cladding layer 30, the material is p-type aluminum gallium indium phosphide (p-AlxGal-xInP, x is 0.55˜0.9) and formed on the upper optical waveguide layer 28, and make the thickness of the upper cladding layer 30 be below 900 nm, the thickness of the upper cladding layer 30 is ⅓˜½ of the thickness of the lower cladding layer 14;
• and
• an ohmic contact layer 34, the material is p-type gallium arsenide (p-GaAs) and formed on the upper cladding layer 30.