Laser emitter including nanowires

A method of manufacturing a laser emitter, the method comprising:

• providing a substrate;
• providing a dielectric mask layer proximate to and above the substrate in a thickness dimension;
• forming three or more trenches in the dielectric mask layer, wherein the three or more trenches have a plurality of different respective widths of varying sizes in a width dimension that is orthogonal to the thickness dimension;
• forming three or more nanowires, wherein the three or more nanowires include a respective nanowire of the three or more nanowires located at least partially within each trench of the three or more trenches, wherein forming each nanowire of the three or more nanowires includes:
• forming a first semiconductor layer located above the substrate in the thickness dimension,
• forming a quantum well layer located proximate to and above the first semiconductor layer in the thickness dimension, and
• forming a second semiconductor layer located proximate to and above the quantum well layer in the thickness dimension;
• wherein respective thicknesses of the quantum well layers of the three or more nanowires vary according to a linear or non-linear function, and
• wherein the respective thicknesses of the quantum well layers of the three or more nanowires in the thickness dimension define a plurality of component spectral peaks at different wavelengths for the respective nanowires;
• and
• providing a controller configured to control the laser emitter by selectively varying electrical pumping signals transmitted to the three or more nanowires, to thereby cause the laser emitter to emit light at the plurality of component spectral peaks within a flattened emission spectrum.

A laser emitter formed by:

• providing a substrate;
• providing a dielectric mask layer proximate to and above the substrate in a thickness dimension;
• forming of three or more trenches in the dielectric mask layer, wherein the three or more trenches have a plurality of three or more different respective widths of varying sizes in a width dimension that is orthogonal to the thickness dimension;
• and
• forming three or more nanowires, wherein the three or more nanowires include a respective nanowire of the three or more nanowires located at least partially within each trench of the three or more trenches, wherein forming each nanowire of the three or more nanowires includes:
• forming a first semiconductor layer located above the substrate in the thickness dimension,
• forming a quantum well layer located proximate to and above the first semiconductor layer in the thickness dimension, and
• forming a second semiconductor layer located proximate to and above the quantum well layer in the thickness dimension;
• wherein respective thicknesses of the quantum well layers of the three or more nanowires vary according to a linear or non-linear function, and
• wherein the respective thicknesses of the quantum well layers of the three or more nanowires in the thickness dimension define a plurality of component spectral peaks at different wavelengths for the respective nanowires;
• and
• providing a controller configured to control the laser emitter by selectively varying electrical pumping signals transmitted to the three or more nanowires, to thereby cause the laser emitter to emit light at the plurality of component spectral peaks within a flattened emission spectrum.