H01S 5/32375
Inn with small amount of p, or inp with small amount of
Official title: {In(As)N with small amount of P, or In(As)P with small amount of N}
H01S5/32375 (Inn with small amount of p, or inp with small amount of) appears on 16 US grants and 9 published applications in this corpus.
Search patents in H01S- Granted patents
- 16
- Published applications
- 9
- Assignees
- 10
- Inventors
- 21
- Latest grant
- 16 Jul 2024
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1997 | 1 | 0 |
| 1998 | 0 | 0 |
| 1999 | 1 | 0 |
| 2000 | 3 | 0 |
| 2001 | 2 | 0 |
| 2002 | 2 | 1 |
| 2003 | 0 | 2 |
| 2004 | 0 | 0 |
| 2005 | 2 | 2 |
| 2006 | 1 | 0 |
| 2007 | 0 | 0 |
| 2008 | 1 | 0 |
| 2009 | 0 | 0 |
| 2010 | 0 | 0 |
| 2011 | 0 | 0 |
| 2012 | 0 | 0 |
| 2013 | 0 | 0 |
| 2014 | 0 | 0 |
| 2015 | 0 | 0 |
| 2016 | 0 | 0 |
| 2017 | 0 | 1 |
| 2018 | 0 | 0 |
| 2019 | 0 | 0 |
| 2020 | 1 | 1 |
| 2021 | 1 | 1 |
| 2022 | 0 | 0 |
| 2023 | 0 | 1 |
| 2024 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Optical semiconductor device16 Jul 2024US 12,040,587 B2Sumitomo Electric Device Innovations, Inc.
- Compact, power-efficient stacked broadband optical emitters1 Jun 2021US 11,022,491 B2ams Sensors Singapore Pte. Ltd.
- Compact, power-efficient stacked broadband optical emitters19 May 2020US 10,656,014 B2ams Sensors Singapore Pte. Ltd.
- Laser diode having an active layer containing N and operable in a 0.6 μm wavelength10 Jun 2008US 7,384,479 B2Ricoh Company, Ltd.
- Semiconductor laser structure8 Aug 2006US 7,088,753 B2Infineon Technologies AG
- Multi-wavelength light-emitting semiconductor devices9 Feb 2023US 2023/0040688 A1IQE plc
- Optical semiconductor device30 Sep 2021US 2021/0305766 A1Sumitomo Electric Device Innovations, Inc.
- Compact, power-efficient stacked broadband optical emitters6 Aug 2020US 2020/0249087 A1ams Sensors Singapore Pte. Ltd.
- Compact, power-efficient stacked broadband optical emitters19 Oct 2017US 2017/0299433 A1Heptagon Micro Optics Pte. Ltd.
- Laser diode having an active layer containing N and operable in a 0.6mum wavelength band27 Oct 2005US 2005/0238075 A1Ricoh Company, Ltd.
Most cited
By later US patents
- III-V aresenide-nitride semiconductor materials and devices135US 5,689,123 ASDL, Inc. · 1997
- Methods for forming group III-V arsenide-nitride semiconductor materials131US 6,130,147 ASDL, Inc. · 2000
- Fabrication method for AlGaIn NPAsSb based devices84US 5,937,274 AHitachi, Ltd. · 1999
- semiconductor light emitting devices72US 6,072,196 ARicoh Company, Ltd. · 2000
- Optical semiconductor device having an active layer containing N68US 6,233,264 B1Ricoh Company, Ltd. · 2001