Semiconductor laser structure
AssigneeInfineon Technologies AG
InventorsHenning Riechert, Anton Yurevitch Egorov
Life of this patent
Estimating the term…
Abstract
The active layer (1) and the barrier layers (2) contain a group III component, a group V component and nitrogen, whereby the active layer is a quaternary material and the barrier layers are ternary materials, or, in order to match the lattice properties of the active layer to the barrier layers, the nitrogen content in the barrier layers is higher. The active layer is preferably InGaAsN, the barrier layers are InGaAsN with higher nitrogen content or GaAsN. Superlattices may exist in the barrier layers, for example, series of thin layers of InxGa1-xAsyN1-y with varying factors x and y, where, in particular, x=0 and y=1.
Claims1
A semiconductor laser structure having an active layer between barrier layers, said active layer being provided for radiation generation,
- in which the active layer is InxGa1-xAsyN1-y semiconductor material, and
- in which the barrier layers are Inx′Ga1-x′Asy′N1-y′ semiconductor material, and
- in which the Inx′Ga1-x′Asy′N1-y′ semiconductor material of the barrier layers has a larger energy band gap than the InxGa1-xAsyN1-y semiconductor material of the active layer, and
- in which, for lattice matching of the active layer to the barrier layers, the nitrogen proportion in the barrier layers is higher than the nitrogen proportion in the active layer such that y′<y.
Dependencies are inferred from the claim text.