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US 2023/0040688 A1Published application
Multi-wavelength light-emitting semiconductor devices
AssigneeIQE plc
InventorAndrew David JOHNSON
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Abstract
A multi-wavelength light-emitting semiconductor device and a method of fabricating the same are disclosed. The semiconductor device includes a substrate, a first reflector on the substrate, a light emission layer on the first reflector, second reflectors on corresponding active regions; and apertures on corresponding active regions. The light emission layer includes active regions. Each of the active regions includes a primary emission wavelength different from each other.
Claims20
A semiconductor device, comprising:
- a substrate;
- a first reflector on the substrate;
- a light emission layer on the first reflector, wherein the light emission layer comprises active regions, and wherein each of the active regions comprises a primary emission wavelength different from each other;
- second reflectors on corresponding active regions;
- and
- apertures on corresponding active regions.
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A method, comprising:
- forming a bottom reflector on a first side of a substrate;
- forming a light emission layer with first and second active regions on the bottom reflector, wherein the first and second active regions comprise an initial primary emission wavelength;
- forming first and second top reflectors on the first and second active regions, respectively;
- forming first and second apertures on the first and second active regions, respectively;
- performing an anneal process on the first and second active regions to shift the initial primary emission wavelength to first and second primary emission wavelengths, respectively, wherein the first and second primary emission wavelengths are different from each other.
2 more elements
Dependencies are inferred from the claim text.