H01S 5/32358
Containing very small amounts, usually less than 1%, of an additional iii
Official title: {containing very small amounts, usually less than 1%, of an additional III or V compound to decrease the bandgap strongly in a non-linear way by the bowing effect}
H01S5/32358 (Containing very small amounts, usually less than 1%, of an additional iii) appears on 149 US grants and 127 published applications in this corpus.
Search patents in H01S- Granted patents
- 149
- Published applications
- 127
- Assignees
- 51
- Inventors
- 204
- Latest grant
- 9 Sep 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1995 | 1 | 0 |
| 1996 | 1 | 0 |
| 1997 | 1 | 0 |
| 1998 | 5 | 0 |
| 1999 | 12 | 0 |
| 2000 | 5 | 0 |
| 2001 | 7 | 2 |
| 2002 | 8 | 14 |
| 2003 | 11 | 23 |
| 2004 | 16 | 15 |
| 2005 | 15 | 23 |
| 2006 | 13 | 7 |
| 2007 | 10 | 10 |
| 2008 | 8 | 6 |
| 2009 | 8 | 6 |
| 2010 | 7 | 3 |
| 2011 | 6 | 4 |
| 2012 | 3 | 1 |
| 2013 | 3 | 1 |
| 2014 | 0 | 0 |
| 2015 | 0 | 0 |
| 2016 | 1 | 2 |
| 2017 | 0 | 1 |
| 2018 | 1 | 0 |
| 2019 | 0 | 0 |
| 2020 | 1 | 1 |
| 2021 | 1 | 3 |
| 2022 | 0 | 2 |
| 2023 | 2 | 3 |
| 2024 | 2 | 0 |
| 2025 | 1 | 0 |
By publication year. Applications have been published since 2001.
Subgroups
Granted patents
Recent patents
- Dilute nitride long-wavelength emitter with improved performance over temperature9 Sep 2025US 12,413,048 B2Lumentum Operations LLC
- Optical semiconductor device16 Jul 2024US 12,040,587 B2Sumitomo Electric Device Innovations, Inc.
- Optoelectronic device comprising a semiconductor layer based on GeSn having a single-crystal portion with a direct band structure and an underlying barrier region16 Jul 2024US 12,040,595 B2Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Semiconductor epitaxial wafer24 Oct 2023US 11,799,011 B2Visual Photonics Epitaxy Co., Ltd.
- Vertical cavity surface emitting laser diode (VCSEL) having AlGaAsP layer with compressive strain8 Aug 2023US 11,721,954 B2Visual Photonics Epitaxy Co., Ltd.
- Dilute nitride long-wavelength emitter with improved performance over temperature17 Aug 2023US 2023/0261443 A1Lumentum Operations LLC
- Optoelectronic device comprising a semiconductor layer based on gesn having a single-crystal portion with a direct band structure and an underlying barrier region15 Jun 2023US 2023/0187567 A1Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Multi-wavelength light-emitting semiconductor devices9 Feb 2023US 2023/0040688 A1IQE plc
- Gallium arsenide based multi-junction dilute nitride long-wavelength vertical-cavity surface-emitting laser29 Dec 2022US 2022/0416512 A1Lumentum Operations LLC
- Semiconductor epitaxial wafer13 Oct 2022US 2022/0328645 A1Visual Photonics Epitaxy Co., Ltd.
Most cited
By later US patents
- III-V aresenide-nitride semiconductor materials and devices135US 5,689,123 ASDL, Inc. · 1997
- Methods for forming group III-V arsenide-nitride semiconductor materials131US 6,130,147 ASDL, Inc. · 2000
- Light emitting devices with layered III-V semiconductor structures124US 6,207,973 B1Ricoh Company, Ltd. · 2001
- Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system104US 6,765,232 B2Ricoh Company, Ltd. · 2004
- Long-wavelength infra-red vertical cavity surface-emitting laser on a gallium arsenide substrate90US 5,805,624 AHewlett-Packard Company · 1998