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US 6,765,232 B2Granted
Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system
AssigneeRicoh Company, Ltd.
InventorsTakashi Takahashi, Morimasa Kaminishi, Shunichi Sato, Akihiro Itoh, Naoto Jikutani
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Abstract
A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorporated into said active layer together with Al is set to a level such that said semiconductor light-emitting device can perform a continuous laser oscillation at room temperature.
Claims44
A semiconductor light-emitting device, comprising:
- a substrate;
- an active layer containing nitrogen;
- and
- a semiconductor layer containing Al interposed between said substrate and said active layer,
- said active layer being grown by using a nitrogen compound source,
- said semiconductor layer containing Al being grown by using a metal organic source of Al,
- a concentration level of an impurity element forming a non-optical recombination level in said active layer being set to a level such that said semiconductor light-emitting device can cause a continuous laser oscillation at room temperature.
4 more elements
A semiconductor light-emitting device, comprising:
- a substrate;
- an active layer containing nitrogen;
- a semiconductor layer containing Al provided between said substrate and said active layer,
- said active layer being grown by using a nitrogen compound source,
- said semiconductor layer being grown by using a metal organic source of Al,
- a concentration level of oxygen in said active layer being set to a level such that said semiconductor light-emitting device can cause a continuous laser oscillation at room temperature.
3 more elements
A semiconductor light-emitting device, comprising:
- a substrate;
- an active layer containing therein nitrogen;
- and
- a semiconductor layer containing therein Al provided between said substrate and said active layer,
- wherein said active layer is grown by using a nitrogen compound source,
- said semiconductor layer is grown by using a metal organic source of Al, and
- wherein an oxygen concentration level of said active layer is set to be less than 1.5×1018 cm−3.
4 more elements
A semiconductor light-emitting device, comprising:
- a substrate;
- an active layer containing nitrogen;
- a semiconductor layer containing Al provided between said substrate and said active layer,
- said active layer being grown by using a nitrogen compound source,
- said semiconductor layer being grown by using a metal organic source of Al,
- wherein an Al concentration level of said active layer is set to a level such that such that said semiconductor light-emitting device can cause a continuous laser oscillation at room temperature.
3 more elements
A semiconductor light-emitting device, comprising:
- a substrate;
- an active layer containing nitrogen;
- a semiconductor layer containing Al provided between said substrate and said active layer,
- said active layer being grown by using a nitrogen compound source,
- said semiconductor layer being grown by using a metal organic source of Al,
- wherein said active layer contains Al with a concentration level of less than 2×1019 cm−3.
3 more elements
A surface-emission type semiconductor light-emitting device, comprising:
- a substrate;
- an active layer containing nitrogen;
- a semiconductor distributed Bragg reflector provided between said substrate and said active layer, said semiconductor distributed Bragg reflector comprising a plurality of semiconductor layers, at least a part of said semiconductor layers containing Al,
- said active layer being grown by using a nitrogen compound source,
- said semiconductor layer containing Al being grown by using a metal organic source of Al,
- a concentration level of an impurity element forming a non-optical recombination level in said active layer being set to a level such that said semiconductor light-emitting device can cause a continuous laser oscillation at room temperature.
3 more elements
A semiconductor light-emitting device, comprising:
- a substrate;
- a first semiconductor layer containing Al stacked on said substrate;
- and
- an active layer containing nitrogen formed on said first semiconductor layer containing Al;
- said first semiconductor layer being grown by using an organic metal source of Al;
- wherein there is provided a second semiconductor layer containing Al between said first semiconductor layer containing Al and said active layer containing nitrogen, with a thickness smaller than a thickness of said first semiconductor layer containing Al, after a step of removing residual Al species formed of one or more of an Al source, Al reactant, Al compound or Al remaining in a part of said growth chamber where said nitrogen compound source or an impurity contained in said nitrogen compound source makes a contact,
- a concentration of an impurity forming a non-optical recombination level in said active layer containing nitrogen is set to a level such that said semiconductor light-emitting device can perform a room temperature continuous oscillation.
4 more elements
A semiconductor light-emitting device, comprising:
- a substrate;
- a first semiconductor layer containing Al stacked on said substrate;
- an intermediate layer formed on said first semiconductor layer containing Al;
- and
- an active layer containing nitrogen formed on said intermediate layer,
- said first semiconductor layer being grown by using a metal organic source of Al,
- said active layer being grown by using a nitrogen compound source,
- wherein there is provided is provided a second semiconductor layer containing Al between said first semiconductor layer containing Al and said intermediate layer, with a thickness smaller than a thickness of said first semiconductor layer containing Al, after a step of removing residual Al species formed of one or more of an Al source, Al reactant, Al compound or Al remaining in a part of said growth chamber where said nitrogen compound source or an impurity contained in said nitrogen compound source makes a contact,
- a concentration of an impurity forming a non-optical recombination level in said active layer containing nitrogen is set to a level such that said semiconductor light-emitting device can perform a room temperature continuous oscillation.
6 more elements
A semiconductor light-emitting device, comprising:
- a substrate;
- a first semiconductor layer containing Al stacked on said substrate;
- and
- an active layer containing nitrogen formed on said intermediate layer,
- said first semiconductor layer being grown by using a metal organic source of Al,
- said active layer being grown by using a nitrogen compound source,
- wherein there is provided is provided a second semiconductor layer containing Al between said first semiconductor layer containing Al and said active layer, with a thickness smaller than a thickness of said first semiconductor layer containing Al, after a step of removing residual Al species formed of one or more of an Al source, Al reactant, Al compound or Al remaining in a part of said growth chamber where said nitrogen compound source or an impurity contained in said nitrogen compound source makes a contact,
- a concentration of Al in said active layer containing nitrogen is set to a level such that said semiconductor light-emitting device can perform a room temperature continuous oscillation.
5 more elements
A semiconductor light-emitting device, comprising:
- a substrate;
- a first semiconductor layer containing Al stacked on said substrate;
- an intermediate layer formed on said first semiconductor layer containing Al;
- and
- an active layer containing nitrogen formed on said intermediate layer,
- said first semiconductor layer being grown by using a metal organic source of Al,
- said active layer being grown by using a nitrogen compound source,
- wherein there is provided is provided a second semiconductor layer containing Al between said first semiconductor layer containing Al and said intermediate layer, with a thickness smaller than a thickness of said first semiconductor layer containing Al, after a step of removing residual Al species formed of one or more of an Al source, Al reactant, Al compound or Al remaining in a part of said growth chamber where said nitrogen compound source or an impurity contained in said nitrogen compound source makes a contact,
- a concentration of Al in said active layer containing nitrogen is set equal to or smaller than a concentration of Al in said intermediate layer.
6 more elements
A semiconductor light-emitting device having a substrate, an active layer containing nitrogen and a semiconductor layer containing Al provided between said substrate and said active layer,
- said semiconductor layer containing Al being grown by using a metal organic source of Al,
- said active layer containing nitrogen being grown by using a nitrogen compound source,
- wherein there is provided a GaNAs layer or a GaInNAs layer or a GaNPAs layer between said semiconductor layer containing Al and said active layer containing nitrogen.
A semiconductor light-emitting device comprising a substrate, an active layer containing nitrogen and a semiconductor layer containing Al between said substrate and said active layer containing nitrogen,
- said semiconductor layer containing Al being grown by using a metal organic source of Al,
- said active layer containing nitrogen being grown by using a nitrogen compound source,
- wherein there is formed a GaInNP layer or a GaInNPAs layer between said semiconductor layer containing Al and said active layer containing nitrogen.
A semiconductor light-emitting device, comprising:
- a substrate;
- an active layer containing nitrogen;
- and
- a semiconductor layer containing Al interposed between said substrate and said active layer,
- a concentration level of an impurity element forming a non-optical recombination level in said active layer being set to a level such that said semiconductor light-emitting device can cause a continuous laser oscillation at room temperature.
2 more elements
A semiconductor light-emitting device, comprising:
- a substrate;
- an active layer containing nitrogen;
- a semiconductor layer containing Al provided between said substrate and said active layer,
- a concentration level of oxygen in said active layer being set to a level such that said semiconductor light-emitting device can cause a continuous laser oscillation at room temperature.
1 more element
A semiconductor light-emitting device, comprising:
- a substrate;
- an active layer containing therein nitrogen;
- and
- a semiconductor layer containing therein Al provided between said substrate and said active layer,
- wherein an oxygen concentration level of said active layer is set to be less than 1.5×1018 cm−3.
2 more elements
A semiconductor light-emitting device, comprising:
- a substrate;
- an active layer containing nitrogen;
- a semiconductor layer containing Al provided between said substrate and said active layer,
- wherein an Al concentration level of said active layer is set to a level such that said semiconductor light-emitting device can cause a continuous laser oscillation at room temperature.
1 more element
A semiconductor light-emitting device, comprising:
- a substrate;
- an active layer containing nitrogen;
- a semiconductor layer containing Al provided between said substrate and said active layer,
- wherein said active layer contains Al with a concentration level of less than 2×1019 cm−3.
1 more element
A semiconductor light-emitting device having a substrate, an active layer containing nitrogen and a semiconductor layer containing Al provided between said substrate and said active layer,
- wherein there is provided a semiconductor layer containing nitrogen between said semiconductor layer containing Al and said active layer containing nitrogen,
- said semiconductor layer containing Al constituting a distributed Bragg reflector, said semiconductor light-emitting device being a surface-emission type laser diode device emitting an optical beam perpendicularly to a substrate surface.
A semiconductor light-emitting device comprising a substrate, an active layer containing nitrogen and a semiconductor layer containing Al between said substrate and said active layer containing nitrogen,
- wherein there is formed a semiconductor layer containing nitrogen between said semiconductor layer containing Al and said active layer containing nitrogen;
- said semiconductor layer containing Al constituting a distributed Bragg reflector, said semiconductor light-emitting device being a surface-emission type laser diode device emitting an optical beam perpendicularly to a substrate surface.
A semiconductor light-emitting device comprising:
- a lower surrounding layer between a substrate and a group III-V compound semiconductor layer containing nitrogen, said lower surrounding layer being formed primarily of GatIn1-tPuAs1-u (0≦t≦1, 0≦u≦1),
- wherein said group III-V compound semiconductor layer containing nitrogen has an oxygen concentration of 2.1×1017 cm−3 or less.
Dependencies are inferred from the claim text.