Back to results
US 7,384,479 B2Granted
Laser diode having an active layer containing N and operable in a 0.6 μm wavelength
AssigneeRicoh Company, Ltd.
InventorsNaoto Jikutani, Shunichi Sato, Takashi Takahashi
Life of this patent
Estimating the term…
Abstract
An optical semiconductor device operable in a 0.6 μm band includes an active layer of GaInNP sandwiched by a pair of GaInP layer with a thickness of about 2 molecular layers or less.
Claims6
An optical semiconductor device, comprising:
- a substrate;
- a first layer of a III-V compound semiconductor material formed on said substrate epitaxially, said first layer being substantially free from N;
- an active layer of a III-V compound semiconductor material formed on said first layer epitaxially in intimate contact therewith, said active layer containing N as a group V element;
- and
- a second layer of a III-V compound semiconductor material formed on said active layer epitaxially in intimate contact therewith, said second layer being substantially free from N,
- wherein an interface between said first layer and said active layer contains C.
3 more elements
A semiconductor layered structure, comprising;
- a first epitaxial layer of AlGaInNP having a composition represented by compositional parameters x1, y1 and z1 as Alx1Gay1In(1-x1-y1)Nz1P(1-z1) wherein 0≦x1<1, 0<y1≦1, and 0<z1<1;
- a second epitaxial layer of AlGaInP having a composition represented by compositional parameters x2 and y2 as Alx2Gay2In(1-x2-y2)P, said second epitaxial layer being disposed adjacent to said first epitaxial layer;
- and
- a third epitaxial layer of AlGaInP having a composition represented by compositional parameters x3 and y3 as Alx3Gay3In(1-x3-y3)P, said third epitaxial layer being disposed between said first and second epitaxial layers, said first through third epitaxial layers maintaining an epitaxy with each other,
- wherein said compositional parameters x2, x3 and y3 are set so as to satisfy the relationships:
- 0≦x3<x2<1;
- and 0<y3≦1.
4 more elements
A semiconductor light-emitting device, comprising:
- a substrate of a first conductivity type;
- a first cladding layer of AlGaInP of said first conductivity type provided on said substrate, said first cladding layer having a composition represented by compositional parameters x2 and y2 as Alx2Gay2In(1-x2-y2)P;
- an active layer of undoped AlGaInNP provided on said first cladding layer, said active layer having a composition represented by compositional parameters x1, y1 and z1 as Alx1Gay1In(1-x1-y1)Nz1P(1-z1), wherein 0≦x1<1, 0<y1≦, 1, and 0<z1<1;
- and
- a second cladding layer of AlGaInP of a second, opposite conductivity type provided on said active layer,
- wherein an intermediate layer of AlGaInP is provided between said first cladding layer and said active layer, said intermediate layer having a composition represented by compositional parameters x3, y3 and z3 as Alx3Gay3In(1-x3-y3)P,
- said compositional parameters x2, x3 and y3 satisfying the relationships:
- 0≦x3<x2<1;
- and 0<y3≦1.
6 more elements
A semiconductor light-emitting device, comprising:
- a substrate of a first conductivity type;
- a first cladding layer of said first conductivity type provided on said substrate;
- a first optical waveguide layer of undoped AlGaInP provided on said first cladding layer;
- an active layer of undoped AlGaInNP provided on said first optical waveguide layer;
- a second optical waveguide layer of undoped AlGaInP provided on said active layer;
- and
- a second cladding layer of a second, opposite conductivity type provided on said second optical waveguide layer,
- wherein said active layer has a composition represented by compositional parameters x1, y1 and z1 as Alx1Gay1In(1-x1-y1)Nz1P(1-z1) wherein 0≦x1<1, 0<y1≦1, 0<z1<1,
- wherein said first optical waveguide layer has a composition represented by compositional parameters x2 and y2 as Alx2Gay2In(1-x2-y2)P,
- wherein an intermediate layer of AlGaInP is provided between said first optical waveguide layer and said active layer, said intermediate layer having a composition represented by compositional parameters x3 and y3 as Alx3Gay3In(1-x3-y3)P, and
- wherein said compositional parameters satisfy the relationships:
- 0≦x3<x2<1;
- and 0<y3≦1.
10 more elements
Dependencies are inferred from the claim text.