H01S 5/2009
By using electron barrier layers
Official title: {by using electron barrier layers}
H01S5/2009 (By using electron barrier layers) appears on 605 US grants and 631 published applications in this corpus.
Search patents in H01S- Granted patents
- 605
- Published applications
- 631
- Assignees
- 182
- Inventors
- 934
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 1 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 2 | 0 |
| 1988 | 2 | 0 |
| 1989 | 2 | 0 |
| 1990 | 0 | 0 |
| 1991 | 2 | 0 |
| 1992 | 2 | 0 |
| 1993 | 2 | 0 |
| 1994 | 6 | 0 |
| 1995 | 9 | 0 |
| 1996 | 13 | 0 |
| 1997 | 6 | 0 |
| 1998 | 9 | 0 |
| 1999 | 3 | 0 |
| 2000 | 10 | 0 |
| 2001 | 2 | 3 |
| 2002 | 13 | 6 |
| 2003 | 15 | 10 |
| 2004 | 11 | 15 |
| 2005 | 9 | 21 |
| 2006 | 13 | 24 |
| 2007 | 6 | 36 |
| 2008 | 18 | 48 |
| 2009 | 25 | 26 |
| 2010 | 46 | 53 |
| 2011 | 44 | 48 |
| 2012 | 33 | 40 |
| 2013 | 28 | 33 |
| 2014 | 35 | 21 |
| 2015 | 38 | 27 |
| 2016 | 24 | 19 |
| 2017 | 26 | 12 |
| 2018 | 14 | 19 |
| 2019 | 22 | 16 |
| 2020 | 21 | 26 |
| 2021 | 16 | 31 |
| 2022 | 19 | 23 |
| 2023 | 14 | 19 |
| 2024 | 22 | 18 |
| 2025 | 14 | 20 |
| 2026 | 7 | 17 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Composition and method for making picocrystalline artificial borane atoms6 Oct 2026US 12,757,646 B2SemiNuclear, Inc.
- Laser based white light system configured for communication16 Jun 2026US 12,659,034 B2KYOCERA SLD Laser, Inc.
- Nitride-based semiconductor light-emitting element and manufacturing method thereof28 Apr 2026US 12,615,885 B2Nuvoton Technology Corporation Japan
- Phosphor structures31 Mar 2026US 12,592,547 B2KYOCERA SLD Laser, Inc.
- Semiconductor laser components3 Mar 2026US 12,567,724 B2Anhui Gan Semiconductor Co., Ltd.
- Vertical cavity light-emitting element20 Aug 2026US 2026/0246236 A1Stanley Electric Co., Ltd.
- Two-dimensional photonic crystal laser13 Aug 2026US 2026/0237965 A1Kyoto University
- Method for reducing peak width of emission spectrum of organic solid-state semiconductor laser and organic electroluminescent device13 Aug 2026US 2026/0237972 A1Koala Tech Inc.
- Nitride-based semiconductor light-emitting element and manufacturing method thereof13 Aug 2026US 2026/0239778 A1Nuvoton Technology Corporation Japan
- Ultraviolet laser diode on a nano-porous aluminum gallium nitride template6 Aug 2026US 2026/0229837 A1The Regents of the University of California
Most cited
By later US patents
- Nitride semiconductor device with improved lifetime and high output power273US 6,586,762 B2Nichia Corporation · 2003
- Growth structures and method for forming laser diodes on {30-31} or off cut gallium and nitrogen containing substrates237US 8,351,478 B2Soraa, Inc. · 2013
- Method of fabricating nitride semiconductor laser234US 7,939,354 B2Sumitomo Electric Industries, Ltd. · 2011
- Growth structures and method for forming laser diodes on {20-21} or off cut gallium and nitrogen containing substrates234US 8,355,418 B2Soraa, Inc. · 2013
- Light-emitting device214US 8,017,932 B2Rohm Co., Ltd. · 2011