Method for reducing peak width of emission spectrum of organic solid-state semiconductor laser and organic electroluminescent device
AssigneeKoala Tech Inc.
InventorsMorgan Auffray, Fatima Bencheikh
Life of this patent
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Abstract
An organic solid-state semiconductor laser including a hole injection section, an electron injection section, a light-emitting layer of emitting light by recombining holes and electrons, and an optical resonator that propagates the emitted light inside the light-emitting layer, and including a hole-blocking layer on the electron injection section side of the light-emitting layer so as to be adjacent to the light-emitting layer or an electron-blocking layer on the hole injection section side of the light-emitting layer so as to be adjacent to the light-emitting layer has a small peak width of the emission spectrum.
Claims22
A method for narrowing a full-width half-maximum (FWHM) of an emission wavelength peak of an emission spectrum of an organic electroluminescent device provided with:
- a hole injection section of injecting holes,
- an electron injection section of injecting electrons, and
- a light-emitting layer of emitting light by recombining holes and electrons, wherein
- the light generated in the light-emitting layer propagates in a lateral direction of the light-emitting layer, the method comprising:
- arranging a recombination-active region along the lateral direction of the light-emitting layer.
A method for narrowing a full-width half-maximum (FWHM) of an emission wavelength peak of an emission spectrum of an organic electroluminescent device provided with:
- a hole injection section of injecting holes,
- an electron injection section of injecting electrons, and
- a light-emitting layer arranged between the hole injection section and the electron injection section to emit light by recombining holes and electrons, wherein
- the light generated in the light-emitting layer propagates in a lateral direction of the light-emitting layer, the method comprising:
- when a side of the light-emitting layer that is an exciton-dense region is on the electron injection section side, arranging a hole-blocking layer at a position between the light-emitting layer and the electron injection section and adjacent to the light-emitting layer;
- and
- when the side of the light-emitting layer that is the exciton-dense region is on the hole injection section side, arranging an electron-blocking layer at a position between the light-emitting layer and the hole injection section and adjacent to the light-emitting layer.
-25. (canceled)
An organic solid-state semiconductor laser comprising:
- a hole injection section of injecting holes;
- an electron injection section of injecting electrons;
- a light-emitting layer arranged between the hole injection section and the electron injection section to emit light by recombining holes and electrons;
- and
- an optical resonator that propagates the emitted light inside the light-emitting layer,
- the organic solid-state semiconductor laser comprising
- a hole-blocking layer on the electron injection section side of the light-emitting layer so as to be adjacent to the light-emitting layer, or
- an electron-blocking layer on the hole injection section side of the light-emitting layer so as to be adjacent to the light-emitting layer.
-45. (canceled)
Dependencies are inferred from the claim text.