Semiconductor laser components

A semiconductor laser component comprising, from bottom to top, a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer, and an upper limiting layer, wherein the active layer satisfies at least one of that a content ratio of an element Al to an element H satisfies a first preset proportion distribution, a content ratio of an element In to the element H satisfies a second preset proportion distribution, a content ratio of an element Si to the element H satisfies a third preset proportion distribution, a content ratio of an element Mg to the element H satisfies a fourth preset proportion distribution, and a content ratio of an element C to an element O satisfies a fifth preset proportion distribution, wherein

• an electron affinity energy distribution of the electron blocking layer is a V-shaped distribution, a Phillips ionization degree distribution of the electron blocking layer is a V-shaped distribution, an electron mobility distribution of the electron blocking layer is a V-shaped distribution, and an electron effective mass distribution of the electron blocking layer is an inverted V-shaped distribution;
• the electron affinity energy distribution of the electron blocking layer corresponds to a curvilinear distribution of a nineteenth function, the nineteenth function being y=u|x-m|, u>1, and m>0;
• the Phillips ionization degree distribution of the electron blocking layer corresponds to a curvilinear distribution of a twentieth function, the twentieth function being y=w|x-n|, w>1, and n>0;
• the electron mobility distribution of the electron blocking layer corresponds to a curvilinear distribution of a twenty-first function, the twenty-first function being y=s|x-t|, s>1, and t>0;
• the electron effective mass distribution of the electron blocking layer corresponds to a curvilinear distribution in a third quadrant of a twenty-second function, the twenty-second function being y=x+k/x, and k>0;
• the active layer includes a first active layer and a second active layer;
• a Phillips ionization degree distribution of the first active layer is a V-shaped distribution, and the Phillips ionization degree distribution corresponds to a curvilinear distribution of a fourteenth function, the fourteenth function being y=x2+ex;
• a conduction band effective state density distribution of the first active layer is an inverted V-shaped distribution, and the conduction band effective state density distribution corresponds to the curvilinear distribution of a third quadrant of a fifteenth function, the fifteenth function being y=sinx/x;
• a breakdown field strength distribution of the first active layer is a first parabolic distribution, an opening of a first parabola faces upward, and the breakdown field strength distribution corresponds to a curvilinear distribution of a sixteenth function, the sixteenth function being y=Ax2+Bx+C, A>0, B and C being arbitrary numbers;
• a thermal conductivity distribution of the first active layer is a second parabolic distribution, an opening of a second parabola faces downward, and the thermal conductivity distribution corresponds to a curvilinear distribution of a seventeenth function, the seventeenth function being y=Dx2+Ex+F, D<0, E and F being arbitrary numbers;
• and
• a thirteenth preset proportion distribution satisfied by a content ratio of an element In elements to an element of H of the first active layer is a third parabolic distribution, an opening of a third parabola faces upward, and the thirteenth preset proportion distribution corresponds to a curvilinear distribution of an eighteenth function, the eighteenth function being y=Gx2+Hx+I, G>0, H and I being arbitrary numbers.