H01S 5/2004
Confining in the direction perpendicular to the layer structure
Official title: {Confining in the direction perpendicular to the layer structure}
H01S5/2004 (Confining in the direction perpendicular to the layer structure) appears on 1,358 US grants and 1,394 published applications in this corpus.
Search patents in H01S- Granted patents
- 1,358
- Published applications
- 1,394
- Assignees
- 427
- Inventors
- 2,225
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 1 | 0 |
| 1982 | 4 | 0 |
| 1983 | 1 | 0 |
| 1984 | 2 | 0 |
| 1985 | 0 | 0 |
| 1986 | 3 | 0 |
| 1987 | 2 | 0 |
| 1988 | 7 | 0 |
| 1989 | 9 | 0 |
| 1990 | 5 | 0 |
| 1991 | 6 | 0 |
| 1992 | 6 | 0 |
| 1993 | 10 | 0 |
| 1994 | 19 | 0 |
| 1995 | 15 | 0 |
| 1996 | 23 | 0 |
| 1997 | 15 | 0 |
| 1998 | 22 | 0 |
| 1999 | 9 | 0 |
| 2000 | 19 | 0 |
| 2001 | 17 | 17 |
| 2002 | 28 | 33 |
| 2003 | 43 | 33 |
| 2004 | 34 | 42 |
| 2005 | 41 | 60 |
| 2006 | 39 | 52 |
| 2007 | 22 | 62 |
| 2008 | 42 | 78 |
| 2009 | 49 | 54 |
| 2010 | 83 | 83 |
| 2011 | 64 | 70 |
| 2012 | 49 | 61 |
| 2013 | 49 | 58 |
| 2014 | 63 | 41 |
| 2015 | 71 | 56 |
| 2016 | 57 | 48 |
| 2017 | 51 | 46 |
| 2018 | 43 | 43 |
| 2019 | 58 | 54 |
| 2020 | 49 | 60 |
| 2021 | 42 | 60 |
| 2022 | 42 | 64 |
| 2023 | 38 | 67 |
| 2024 | 39 | 56 |
| 2025 | 37 | 52 |
| 2026 | 29 | 44 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Composition and method for making picocrystalline artificial borane atoms6 Oct 2026US 12,757,646 B2SemiNuclear, Inc.
- Inverted slab-coupled optical waveguide8 Sep 2026US 12,731,964 B2Cisco Technology, Inc.
- Semiconductor laser structure for higher-order mode suppression25 Aug 2026US 12,719,234 B2FreeSpace Photonics, Inc.
- Optical semiconductor device, optical unit, and method for manufacturing optical unit25 Aug 2026US 12,719,237 B2Hamamatsu Photonics K.K.
- Quantum cascade element25 Aug 2026US 12,719,239 B2Kabushiki Kaisha Toshiba
- Optical nonreciprocal device and optical circuit1 Oct 2026US 2026/0302717 A1Nichia Corporation
- Semiconductor device1 Oct 2026US 2026/0302718 A1NTT, Inc.
- Two-dimensional periodically index-coupled fabry perot laser ("2d pic-fl")27 Aug 2026US 2026/0254200 A1
- Semiconductor optical integrated element20 Aug 2026US 2026/0243952 A1Mitsubishi Electric Corporation
- Two-dimensional grating surface-emitting laser ("2d-grsel")20 Aug 2026US 2026/0246230 A1
Most cited
By later US patents
- Nitride semiconductor device with improved lifetime and high output power273US 6,586,762 B2Nichia Corporation · 2003
- Hybrid III-V silicon laser formed by direct bonding247US 8,620,164 B2Intel Corporation · 2013
- Growth structures and method for forming laser diodes on {30-31} or off cut gallium and nitrogen containing substrates237US 8,351,478 B2Soraa, Inc. · 2013
- Semiconductor laser device, and method of manufacturing the same236US 7,470,555 B2Nichia Corporation · 2008
- Method of fabricating nitride semiconductor laser234US 7,939,354 B2Sumitomo Electric Industries, Ltd. · 2011