Light-emitting device
AssigneeRohm Co., Ltd.
InventorsKuniyoshi Okamoto, Hiroaki Ohta
Life of this patent
Estimating the term…
Abstract
A light-emitting device includes a group III nitride semiconductor layer of a multilayer structure consisting of a group III nitride semiconductor having a major surface defined by a nonpolar plane or a semipolar plane and having at least an n-type layer and a p-type layer. A surface of the group III nitride semiconductor layer on a light extraction side is a mirror surface. The light-emitting device may further include a transparent electrode in contact with the surface of the group III nitride semiconductor layer on the light extraction side. In this case, a surface of the transparent electrode on the light extraction side is preferably a mirror surface.
Claims9
A light-emitting device comprising a group III nitride semiconductor layer of a multilayer structure consisting of a group III nitride semiconductor having a major surface defined by a nonpolar plane or a semipolar plane and having at least an n-type layer and a p-type layer, the light-emitting device further comprising:
- an electrode is provided on the surface of the group III nitride semiconductor layer, wherein the electrode is a p-side electrode;
- and
- a light output in a c-axis direction is not less than five times a light output in an a-axis direction as to light outputs of a light emitting layer from the nonpolar plane or the semipolar plane,
- wherein the light-emitting device is a laser diode having a pair of end faces parallel to a c-plane,
- wherein the major surface of the group III nitride semiconductor layer is defined by an m-plane, and
- wherein a major growth surface of the light emitting layer is defined by the m-plane, and polarization of light is stronger in the a-axis direction than in other directions.
Dependencies are inferred from the claim text.