H01S 5/18311
Using selective oxidation
Official title: {using selective oxidation}
H01S5/18311 (Using selective oxidation) appears on 1,198 US grants and 1,521 published applications in this corpus.
Search patents in H01S- Granted patents
- 1,198
- Published applications
- 1,521
- Assignees
- 282
- Inventors
- 1,438
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1993 | 1 | 0 |
| 1994 | 1 | 0 |
| 1995 | 0 | 0 |
| 1996 | 2 | 0 |
| 1997 | 2 | 0 |
| 1998 | 16 | 0 |
| 1999 | 19 | 0 |
| 2000 | 13 | 0 |
| 2001 | 18 | 12 |
| 2002 | 26 | 52 |
| 2003 | 52 | 59 |
| 2004 | 54 | 66 |
| 2005 | 42 | 90 |
| 2006 | 57 | 74 |
| 2007 | 42 | 64 |
| 2008 | 54 | 52 |
| 2009 | 45 | 61 |
| 2010 | 55 | 52 |
| 2011 | 67 | 74 |
| 2012 | 47 | 40 |
| 2013 | 52 | 35 |
| 2014 | 49 | 30 |
| 2015 | 30 | 45 |
| 2016 | 37 | 32 |
| 2017 | 25 | 32 |
| 2018 | 35 | 46 |
| 2019 | 43 | 51 |
| 2020 | 44 | 86 |
| 2021 | 33 | 92 |
| 2022 | 54 | 74 |
| 2023 | 44 | 74 |
| 2024 | 63 | 100 |
| 2025 | 42 | 63 |
| 2026 | 34 | 65 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Light emitting element29 Sep 2026US 12,749,868 B2Sony Group Corporation
- Plated trench for parasitic capacitance control of vertical cavity surface emitting laser devices29 Sep 2026US 12,749,870 B2Lumentum Operations LLC
- Vertical cavity surface emitting laser device and method of producing a vertical cavity surface emitting laser device15 Sep 2026US 12,738,714 B2Sony Group Corporation
- Light emitting device25 Aug 2026US 12,719,236 B2Sony Semiconductor Solutions Corporation
- Surface-emitting laser device and distance measurement device having same18 Aug 2026US 12,710,536 B2LG Innotek Co., Ltd.
- Surface emitting element1 Oct 2026US 2026/0302724 A1Sony Semiconductor Solutions Corporation
- Surface-emitting element1 Oct 2026US 2026/0302729 A1Sony Semiconductor Solutions Corporation
- Single photon source device1 Oct 2026US 2026/0302732 A1Institute of Science Tokyo
- Surface emitting laser, method for fabricating surface emitting laser10 Sep 2026US 2026/0269568 A1Sanoh Industrial Co., Ltd.
- Oxide aperture shaping in vertical cavity surface-emitting laser10 Sep 2026US 2026/0269569 A1II-Vi Delaware, Inc.
Most cited
By later US patents
- Formation of insulating aluminum oxide in semiconductor substrates498US 6,635,559 B2Spire Corporation · 2003
- Efficient semiconductor light-emitting device and method222US 5,493,577 ASandia Corporation · 1996
- Structure and method for electrical isolation of optoelectronic integrated circuits207US 6,545,335 B1Xerox Corporation · 2003
- Structure and method for planar lateral oxidation in passive devices196US 6,548,908 B2Xerox Corporation · 2003
- Unitary lens semiconductor device160US 5,633,527 ASandia Corporation · 1997