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US 6,545,335 B1Granted
Structure and method for electrical isolation of optoelectronic integrated circuits
AssigneeXerox Corporation
InventorsChristopher L. Chua, Philip D. Floyd, Thomas L. Paoli, Decai Sun
Life of this patent
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Abstract
Semiconductor devices in an optoelectronic integrated circuit are electrically isolated from each other by using planar lateral oxidation to oxidize a buried semiconductor layer vertically separating the semiconductor devices.
Claims16
An optoelectronic integrated circuit comprising:
- a first active semiconductor device having a top surface and a bottom surface;
- second active semiconductor device having a first surface;
- and
- an oxidized layer disposed between said bottom surface of said first semiconductor device and said first surface of said second semiconductor device, said oxidized layer being exposed to an opening extending from said top surface to said oxidized layer.
1 more element
An intermediate structure for forming an optoelectronic integrated circuit comprising:
- a first active semiconductor device having a top surface and a bottom surface;
- a second active semiconductor device having a first surface;
- and
- an oxidized layer disposed between said bottom surface of said first active semiconductor device and said first surface of said second active semiconductor device, said oxidized layer being exposed to an opening extending from said top surface to said oxidized layer, said opening filled with an oxidizing agent.
1 more element
An integrated circuit comprising:
- a first set of layers that include semiconductor material with which an optical device is formed;
- a second set of layers that include semiconductor material with which an electronic device is formed;
- the optical device and the electronic device being electrically connected;
- and
- a buried layer between the first and second sets of layers, the buried layer including material that is electrically insulating when oxidized;
- the integrated circuit further having one or more etched cavities to access the buried layer for oxidation, material in a region of the buried layer being sufficiently oxidized through the one or more etched cavities to electrically isolate the optical device from the electronic device.
3 more elements
Dependencies are inferred from the claim text.