Surface emitting laser, method for fabricating surface emitting laser

A vertical cavity surface emitting laser (VCSEL), comprising:

• an oxide substrate having a first face, and a second face at an opposite side from the first face, the second face including a curved surface;
• a semiconductor section disposed on the first face of the oxide substrate;
• a lossless antireflective (AR) layer disposed between the semiconductor section and the first face of the oxide substrate;
• a first distributed Bragg reflector (DBR) mirror, the semiconductor section being disposed between the AR layer and the first DBR mirror;
• and
• a second DBR mirror disposed at the curved surface of the oxide substrate, the first DBR mirror, the semiconductor section, the AR layer, the oxide substrate, and the second DBR mirror being arranged in a first axial direction to form an extended cavity,
• the semiconductor section including a p-type III nitride region, a III nitride region, and a III nitride active region between the p-type III nitride region and the III nitride region, the p-type III nitride region, the III nitride active region, and the III nitride region being arranged in the first axial direction, and the III nitride region including an n-type III nitride region.