H01S 5/0422
With n- and p-contacts on the same side of the active layer
Official title: {with n- and p-contacts on the same side of the active layer}
H01S5/0422 (With n- and p-contacts on the same side of the active layer) appears on 443 US grants and 361 published applications in this corpus.
Search patents in H01S- Granted patents
- 443
- Published applications
- 361
- Assignees
- 219
- Inventors
- 858
- Latest grant
- 1 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 0 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 1 | 0 |
| 1981 | 1 | 0 |
| 1982 | 2 | 0 |
| 1983 | 1 | 0 |
| 1984 | 2 | 0 |
| 1985 | 4 | 0 |
| 1986 | 3 | 0 |
| 1987 | 5 | 0 |
| 1988 | 6 | 0 |
| 1989 | 12 | 0 |
| 1990 | 13 | 0 |
| 1991 | 6 | 0 |
| 1992 | 11 | 0 |
| 1993 | 5 | 0 |
| 1994 | 8 | 0 |
| 1995 | 3 | 0 |
| 1996 | 9 | 0 |
| 1997 | 6 | 0 |
| 1998 | 12 | 0 |
| 1999 | 8 | 0 |
| 2000 | 9 | 0 |
| 2001 | 4 | 4 |
| 2002 | 12 | 13 |
| 2003 | 12 | 13 |
| 2004 | 14 | 14 |
| 2005 | 9 | 15 |
| 2006 | 15 | 23 |
| 2007 | 8 | 36 |
| 2008 | 10 | 16 |
| 2009 | 24 | 19 |
| 2010 | 15 | 8 |
| 2011 | 20 | 15 |
| 2012 | 13 | 11 |
| 2013 | 5 | 8 |
| 2014 | 11 | 10 |
| 2015 | 13 | 13 |
| 2016 | 13 | 11 |
| 2017 | 9 | 11 |
| 2018 | 12 | 20 |
| 2019 | 20 | 18 |
| 2020 | 21 | 20 |
| 2021 | 14 | 12 |
| 2022 | 6 | 17 |
| 2023 | 12 | 15 |
| 2024 | 10 | 12 |
| 2025 | 4 | 4 |
| 2026 | 9 | 3 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Optoelectronic device comprising a III-V semiconductor membrane laser source forming a lateral p-i-n junction1 Sep 2026US 12,726,001 B2Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Apparatus for generating laser radiation with a lateral current injection laser arrangement and a cavity, and method for manufacturing the same30 Jun 2026US 12,671,230 B2Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e. V.
- Opto-electronic device16 Jun 2026US 12,658,677 B2Nokia Solutions and Networks Oy
- Optoelectronic semiconductor component with individually controllable contact elements, and method for producing the optoelectronic semiconductor component9 Jun 2026US 12,651,887 B2OSRAM Opto Semiconductors GmbH
- Surface-emitting laser with optimized DBR structure and enhanced optical confinement12 May 2026US 12,627,117 B2Sumitomo Electric Industries, Ltd.
- Directly modulated light source18 Jun 2026US 2026/0171752 A1
- Light source and silicon photonics system including the same30 Apr 2026US 2026/0121372 A1Samsung Electronics Co., Ltd.
- Hybrid silicon iii-v optical devices with a high refractive index spacer between gain medium and waveguide2 Apr 2026US 2026/0095022 A1Intel Corporation
- Silicon photonic platform4 Dec 2025US 2025/0372956 A1International Business Machines Corporation
- Epitaxial oxide materials, structures, and devices28 Aug 2025US 2025/0275302 A1Silanna UV Technologies Pte Ltd
Most cited
By later US patents
- Method of growing nitride semiconductors, nitride semiconductor substrate and nitride semiconductor device643US 6,153,010 ANichia Chemical Industries, Ltd. · 2000
- Light-emitting semiconductor device462US 5,696,389 AKabushiki Kaisha Toshiba · 1997
- Hybrid III-V silicon laser formed by direct bonding247US 8,620,164 B2Intel Corporation · 2013
- Gallium nitride group compound semiconductor laser diode190US 5,247,533 AToyoda Gosei Co., Ltd. · 1993
- Semiconductor light-emitting device and method for manufacturing the same136US 7,132,691 B1Rohm Co., Ltd. · 2006