Directly modulated light source
OwnerJoan RAMIREZ, Claire BESANCONinventors
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Abstract
A directly modulated light source includes: a horizontal laser diode including a horizontal PIN junction, the horizontal junction being formed of an intrinsic zone arranged between a first p-doped zone and a first n-doped zone, the intrinsic zone including quantum wells; a vertical PIN junction formed of the intrinsic zone arranged between a second p-doped zone and a second n-doped zone, the latter zone being arranged on the substrate side; the vertical junction being reverse biased and modulates the light emitted by the horizontal laser diode by the Stark effect in the quantum wells; a blocking layer arranged beneath the first p-doped zone and to prevent current leakage between the first p-type doped zone and the second n-doped zone.
Claims8
A directly modulated light source (DMD) comprising:
- a so-called horizontal laser diode (DH) comprising a substrate (Sub) and a first, so-called horizontal, PIN junction (JH) extending along an X axis of an XYZ coordinate system defining an XY horizontal plane parallel to said substrate and a vertical Z axis, the first PIN junction being formed of an intrinsic zone (Zi) arranged between a first p-type doped zone (Zp1) and a first n-type doped zone (Zn1), the intrinsic zone (Zi) comprising a stack of quantum wells (PQ) arranged perpendicular to the Z axis;
- the horizontal laser diode being intended to be forward biased and configured to emit light (li) along the Y axis when a direct electric current (Cdirect) is injected into the horizontal junction;
- a second, so-called vertical, PIN junction (JV) extending along the Z axis and formed of said intrinsic zone (Zi) arranged between a second p-type doped zone (Zp2) and a second n-type doped zone (Zn2), the latter zone being arranged on the substrate side;
- the vertical junction (JV) being intended to be reverse biased and configured to modulate said light emitted by the horizontal laser diode when an alternating electric field along the Z axis is applied to said intrinsic zone (Zi), said modulation being achieved through the Stark effect in the quantum wells;
- and
- a blocking layer (CB) arranged at least beneath the first p-type doped zone (Zp1) and configured to prevent current leakage between the first p-type doped zone (Zp1) and the second n-type doped zone (Zn2).
Dependencies are inferred from the claim text.