H01S 5/0421
Characterised by the semiconducting contacting layers
Official title: {characterised by the semiconducting contacting layers (electrodes H01S5/0425)}
H01S5/0421 (Characterised by the semiconducting contacting layers) appears on 929 US grants and 854 published applications in this corpus.
Search patents in H01S- Granted patents
- 929
- Published applications
- 854
- Assignees
- 369
- Inventors
- 1,849
- Latest grant
- 1 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 0 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 1 | 0 |
| 1981 | 1 | 0 |
| 1982 | 3 | 0 |
| 1983 | 1 | 0 |
| 1984 | 3 | 0 |
| 1985 | 5 | 0 |
| 1986 | 4 | 0 |
| 1987 | 5 | 0 |
| 1988 | 8 | 0 |
| 1989 | 15 | 0 |
| 1990 | 15 | 0 |
| 1991 | 8 | 0 |
| 1992 | 15 | 0 |
| 1993 | 16 | 0 |
| 1994 | 20 | 0 |
| 1995 | 11 | 0 |
| 1996 | 19 | 0 |
| 1997 | 17 | 0 |
| 1998 | 26 | 0 |
| 1999 | 21 | 0 |
| 2000 | 24 | 0 |
| 2001 | 19 | 12 |
| 2002 | 23 | 35 |
| 2003 | 24 | 33 |
| 2004 | 35 | 46 |
| 2005 | 19 | 40 |
| 2006 | 32 | 39 |
| 2007 | 23 | 57 |
| 2008 | 22 | 35 |
| 2009 | 37 | 37 |
| 2010 | 36 | 17 |
| 2011 | 31 | 27 |
| 2012 | 23 | 15 |
| 2013 | 9 | 15 |
| 2014 | 21 | 21 |
| 2015 | 22 | 26 |
| 2016 | 25 | 23 |
| 2017 | 19 | 26 |
| 2018 | 30 | 50 |
| 2019 | 47 | 43 |
| 2020 | 40 | 51 |
| 2021 | 38 | 47 |
| 2022 | 22 | 42 |
| 2023 | 33 | 29 |
| 2024 | 27 | 36 |
| 2025 | 14 | 34 |
| 2026 | 19 | 18 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Optoelectronic device comprising a III-V semiconductor membrane laser source forming a lateral p-i-n junction1 Sep 2026US 12,726,001 B2Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- VCSEL array with small pulse delay11 Aug 2026US 12,704,602 B2Western Digital Technologies, Inc.
- Optoelectronic component7 Jul 2026US 12,676,451 B2Centre National De La Recherche Scientifique
- Apparatus for generating laser radiation with a lateral current injection laser arrangement and a cavity, and method for manufacturing the same30 Jun 2026US 12,671,230 B2Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e. V.
- Opto-electronic device16 Jun 2026US 12,658,677 B2Nokia Solutions and Networks Oy
- Light-emitting element8 Oct 2026US 2026/0312368 A1Sony Group Corporation
- Broad-area semiconductor laser with improved beam quality1914994524 Sep 2026US 2026/0291168 A1
- Edge-emitting laser diode, related apparatuses, data storage devices, systems, and methods24 Sep 2026US 2026/0291184 A1Seagate Technology LLC
- Laser and fabrication method therefor10 Sep 2026US 2026/0269566 A1Hisense Broadband Multimedia Technologies Co., Ltd.
- Ultraviolet laser diode on a nano-porous aluminum gallium nitride template6 Aug 2026US 2026/0229837 A1The Regents of the University of California
Most cited
By later US patents
- Method of growing nitride semiconductors, nitride semiconductor substrate and nitride semiconductor device643US 6,153,010 ANichia Chemical Industries, Ltd. · 2000
- Light-emitting semiconductor device462US 5,696,389 AKabushiki Kaisha Toshiba · 1997
- III-nitride light emitting devices fabricated by substrate removal250US 6,800,500 B2Lumileds Lighting U.S., LLC · 2004
- Hybrid III-V silicon laser formed by direct bonding247US 8,620,164 B2Intel Corporation · 2013
- Gallium nitride group compound semiconductor laser diode190US 5,247,533 AToyoda Gosei Co., Ltd. · 1993