Hybrid silicon iii-v optical devices with a high refractive index spacer between gain medium and waveguide

A photonic integrated circuit (PIC), comprising:

• a silicon optical waveguide extending over a crystalline silicon substrate;
• and
• a hybrid silicon III-V laser (HSL) coupled to the silicon optical waveguide, wherein the HSL comprises:
• a plurality of III-V material layers over the silicon optical waveguide, wherein the III-V material layers comprise a III-V optical gain material between a p-type III-V layer and an n-type III-V layer;
• a first contact metallization in contact with the p-type III-V layer;
• and
• a second contact metallization in contact with the n-type III-V material, wherein the HSL comprises a thickness of III-V material between the III-V optical gain material and the silicon optical waveguide to support a resonant optical mode having a peak power located at least 0.25 um below the III-V gain material.

A method comprising:

• supplying power a photonic integrated circuit (PIC), wherein the PIC comprises:
• a silicon optical waveguide extending over a crystalline silicon substrate;
• and
• a hybrid silicon III-V laser (HSL) coupled to the silicon optical waveguide, wherein the HSL comprises:
• a plurality of III-V material layers over the silicon optical waveguide, wherein the III-V material layers comprise a III-V optical gain material between a p-type III-V layer and an n-type III-V layer;
• and wherein supplying the power further comprises:
• coupling a first power supply rail to a first contact metallization in contact with the p-type III-V layer;
• and
• coupling a second power supply rail to a second contact metallization in contact with the n-type III-V material;
• and
• generating a resonant optical mode within the HSL, the resonant optical mode having a peak power located at least 0.25 um below the III-V gain material.