H01S 2304/025
Mombe
H01S2304/025 (Mombe) appears on 7 US grants and 6 published applications in this corpus.
Search patents in H01S- Granted patents
- 7
- Published applications
- 6
- Assignees
- 4
- Inventors
- 12
- Latest grant
- 29 Oct 2019
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2002 | 1 | 1 |
| 2003 | 2 | 1 |
| 2004 | 0 | 1 |
| 2005 | 1 | 1 |
| 2006 | 0 | 0 |
| 2007 | 1 | 1 |
| 2008 | 0 | 0 |
| 2009 | 1 | 0 |
| 2010 | 0 | 0 |
| 2011 | 0 | 0 |
| 2012 | 0 | 0 |
| 2013 | 0 | 0 |
| 2014 | 0 | 0 |
| 2015 | 0 | 0 |
| 2016 | 0 | 0 |
| 2017 | 0 | 0 |
| 2018 | 0 | 0 |
| 2019 | 1 | 1 |
By publication year.
Recent patents
- Substrate technology for quantum dot lasers integrated on silicon29 Oct 2019US 10,461,495 B2Cisco Technology, Inc.
- Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system14 Apr 2009US 7,518,161 B2Ricoh Company, Ltd.
- Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system20 Feb 2007US 7,180,100 B2Ricoh Company, Ltd.
- System and method for fabricating efficient semiconductor lasers via use of precursors having a direct bond between a group III atom and a nitrogen atom23 Aug 2005US 6,934,312 B2Agilent Technologies, Inc.
- III-nitride optoelectronic device12 Aug 2003US 6,605,485 B2MP Technologies, LLC
- Substrate technology for quantum dot lasers integrated on silicon5 Sep 2019US 2019/0273361 A1Cisco Technology, Inc.
- Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system15 Nov 2007US 2007/0263687 A1Ricoh Company, Ltd.
- Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system24 Feb 2005US 2005/0040413 A1Ricoh Company, Ltd.
- System and method for fabricating efficient semiconductor lasers via use of precursors having a direct bond between a group III atom and a nitrogen atom1 Apr 2004US 2004/0062283 A1Agilent Technologies, Inc.
- III-V semiconductors separate confinement superlattice optoelectronic devices9 Jan 2003US 2003/0005880 A1
Most cited
By later US patents
- Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system12US 7,180,100 B2Ricoh Company, Ltd. · 2007
- Multi quantum well grinsch detector9US 6,459,096 B12002
- System and method for fabricating efficient semiconductor lasers via use of precursors having a direct bond between a group III atom and a nitrogen atom5US 6,934,312 B2Agilent Technologies, Inc. · 2005
- III-V semiconductors separate confinement superlattice optoelectronic devices3US 6,570,179 B1MP Technologies, LLC · 2003
- Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system3US 7,518,161 B2Ricoh Company, Ltd. · 2009