Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system
AssigneeRicoh Company, Ltd.
InventorsTakashi Takahashi, Shunichi Sato
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Abstract
A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorporated into said active layer together with Al is set to a level such that said semiconductor light-emitting device can perform a continuous laser oscillation at room temperature.
Claims5
A semiconductor light-emitting device having a p-type semiconductor layer between an active layer containing nitrogen and a GaAs substrate, a selective oxidizing layer containing AlAs as a major component disposed in said p-type semiconductor layer, a current confinement structure being formed by oxidizing a part of said disposed selective oxidizing layer, wherein said active layer containing nitrogen has an Al concentration of 2×1019 cm−3 or less.
A semiconductor light-emitting device having a p-type semiconductor layer between an active layer containing nitrogen and a GaAs substrate, a current confinement structure being formed by selective oxidation of a part of a selective oxidizing layer disposed in said p-type semiconductor layer and containing AlAs as a major component, wherein there is provided at least one layer of a GaInPAs layer, a GaInP layer and a GPAs layer between said selective oxidizing layer and said active layer containing nitrogen.
A semiconductor light emitting device having a p-type semiconductor layer between an active layer containing nitrogen and a GaAs substrate, a current confinement structure being formed by selective oxidation of a part of a selective oxidizing layer containing AlAs as a major component disposed in said p-type semiconductor layer, wherein there is formed a semiconductor layer having a bandgap larger than that of said active layer and containing nitrogen between said selective oxidizing layer and said active layer containing nitrogen.
Dependencies are inferred from the claim text.