Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system

A method as claimed 17, wherein there is provided a step of interrupting a growth while growing a distributed Bragg reflector constituting any of said upper and lower reflectors.

A semiconductor film growth method, comprising the steps of

• contacting a nitrogen source material of a nitrogen compound to a metal of Al or an alloy containing a metal of Al;
• and transporting said nitrogen source to a reaction chamber, after said step of contacting, for causing to grow a group III-V semiconductor film.

A semiconductor film growth method as claimed in claim clause 34, wherein said metal Al or said alloy containing said metal Al is a liquid phase, and said nitrogen source gas of said nitrogen compound is transported to said reaction chamber after passing through said metal or said Al alloy containing said metal Al by a bubbling process.

A method of producing a semiconductor light-emitting device having a semiconductor layer containing Al between a substrate and an active layer containing and nitrogen, comprising the steps of:

• growing said semiconductor layer containing Al by using a metal-organic source of Al;
• growing said active layer containing nitrogen by said nitrogen compound source material,
• wherein a side-flow gas is caused to flow in said step of growing said semiconductor layer containing Al between an inner wall of a growth chamber and a gas flow containing said metal-organic Al source so as to prevent residual of said metal-organic source of Al.

A method of producing a semiconductor light-emitting device having a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, comprising the steps of:

• growing said semiconductor layer containing Al by using a metal-organic source of Al;
• growing said active layer containing nitrogen by said nitrogen compound source material,
• wherein a side-flow gas is caused to flow in said step of growing said active layer containing nitrogen between an inner wall of a growth chamber and a gas flow containing said metal-organic Al source.

A method of producing a semiconductor light-emitting device having a semiconductor layer lo containing Al between a substrate and an active layer containing nitrogen, comprising the steps of:

• growing said semiconductor layer containing Al by using a-metal-organic source of Al;
• growing said active layer containing nitrogen by said nitrogen compound source material,
• wherein a production apparatus of said semiconductor light-emitting device provides the means, in said step of growing said semiconductor layer containing Al, for preventing said metal organic Al source from residing on an inner wall of said growth chamber, between said inner wall of said growth chamber and a gas flow containing said metal-organic Al source.

A method of producing a semiconductor light-emitting device having a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, comprising the steps of:

• growing said semiconductor layer containing Al by using a metal-organic source of Al;
• growing said active layer containing nitrogen by said nitrogen compound source material,
• wherein a production apparatus of said semiconductor light-emitting device forms a structure, in said step of growing said semiconductor layer containing Al and/or said step of growing said active layer containing nitrogen, for causing to flow a side-flow gas along an inner wall of a growth chamber.

A method of producing a semiconductor light-emitting device having a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, comprising the steps of:

• growing said semiconductor layer containing Al by using a metal-organic source of Al;
• growing said active layer containing nitrogen by said nitrogen compound source material,
• wherein there is provided a structure, in said step of growing said semiconductor layer containing Al and/or said step of growing said active layer containing nitrogen, for flowing a side-flow gas along a sidewall of a susceptor holding said substrate.

A method of producing a semiconductor light-emitting device, comprising:

• a semiconductor layer containing Al between a substrate and a group III-V compound semiconductor film containing nitrogen,
• wherein there is provided a step of vacuum-evacuating at least one of an Al source supply line and a reaction chamber before a growth of said group III-V compound semiconductor film.

A method of producing a semiconductor light-emitting device having a semiconductor layer containing nitrogen between a substrate and an active layer containing nitrogen,

• wherein said semiconductor light-emitting device is grown by supplying a source gas to a reaction chamber in which a substrate is provided, said active layer containing nitrogen and said semiconductor layer containing nitrogen are grown respectively by using a nitrogen compound source and a metal organic source of Al, group III sources supplied to said reaction chamber for growing said semiconductor layer:containing Al and said active layer containing nitrogen are supplied via respective different gas lines.

A metal-organic vapor phase growth apparatus causing a crystal growth of a semiconductor layer by supplying a source gas to a reaction chamber provided with a substrate,

• at least two semiconductor layers A and B can be grown,
• wherein there are provided plural group III source lines so as to supply group III sources to said reaction chamber via different gas lines when growing said A layer and when growing said B layer.

A method of producing a semiconductor light-emitting device comprising a lower surrounding layer between a substrate and a group III-V compound semiconductor layer containing nitrogen, said lower surrounding layer being formed primarily of GatIn1-tPuAsl-u (0≦t≦1, 0≦u≦1),

• wherein an organic Al source is introduced into a reaction chamber during or before a growth of said lower surrounding layer.

A semiconductor light-emitting device having a substrate, an active layer containing nitrogen and a semiconductor layer containing Al, provided between said substrate and said active layer,

• said semiconductor layer containing Al being grown by using a metal organic source of Al,
• said active layer containing nitrogen being grown by using a nitrogen compound source,
• wherein there is provided a GaNAs layer or a GaInNAs layer between said semiconductor layer containing Al and said active layer containing nitrogen.

A semiconductor light-emitting device comprising a substrate, an active layer containing nitrogen and a semiconductor layer containing Al between said substrate and said active layer containing nitrogen,

• said semiconductor layer containing Al being grown by using a metal organic source of Al,
• said active layer containing nitrogen being grown by using a nitrogen compound source,
• wherein there is formed a GaInNP layer or a GaInNPAs layer between said semiconductor layer containing Al and said active layer containing nitrogen.

A method of producing a semiconductor light-emitting device comprising a substrate, an active layer containing nitrogen and a semiconductor layer containing Al and provided between said substrate and said active layer,

• wherein there is provided a step of removing residual Al species, formed of one or more of an Al source, Al reactant, Al compound and Al and remaining in a growth chamber, by supplying a chlorine compound gas into said growth chamber as an etching gas, after a start of growth of said semiconductor layer containing Al but before a growth of an active layer containing nitrogen.

A method of producing a surface-emission laser diode having, on a semiconductor substrate, an active region including at least one active layer containing nitrogen and causing optical emission, and an upper reflector and a lower reflector respectively above and below said active layer so as to form a cavity structure therebetween,

• said lower reflector having a semiconductor distributed Bragg reflector in which there is formed a periodical change of refractive index and reflecting an incident light by optical interference,
• a layer of lower refractive index of said semiconductor distributed Bragg reflector being formed of AlxGa1-xAs (0<x≦1) a layer of higher refractive index of said semiconductor distributed Bragg reflector being formed of AlyGa1-yAs (0≦y<x≦1),
• wherein there is a step of removing residual Al species formed of one or more of an Al source, Al reactant, Al compound an Al remaining in a growth chamber after growing said lower reflector containing Al but before growing said active layer containing nitrogen, by supplying a chlorine compound gas to said growth chamber as an etching gas.

A method of fabricating a semiconductor light emitting device having a p-type semiconductor layer between an active layer containing nitrogen and a semiconductor substrate, by disposing a selective oxidation layer containing AlAs as a major component in said p-type semiconductor layer, and forming a current confinement structure by selectively oxidizing a part of said disposed selective oxidizing layer, wherein there is provided, after growth of said selective oxidizing layer but before start of growth of said active layer containing nitrogen, a step of removing at least one of an Al source, Al reactant, Al compound and Al remaining in a gas supply line or a growth chamber where a nitrogen compound source or an impurity contained in said nitrogen compound source makes a contact.

A semiconductor light emitting deice having a p-type semiconductor layer between an active layer containing nitrogen and a semiconductor substrate, a selective oxidizing layer containing AlAs as a major component disposed in said p-type semiconductor layer, and a current confinement structure is formed by oxidizing a part of said disposed selective oxidizing layer, wherein said active layer containing nitrogen has an oxygen concentration of 1×1018 cm−3 or less.

A semiconductor light-emitting device having a p-type semiconductor layer between an active layer containing nitrogen and a semiconductor substrate, a selective oxidizing layer containing AlAs as a major component disposed in said p-type semiconductor layer, a current confinement structure being formed by oxidizing a part of said disposed selective oxidizing layer, wherein said active layer containing nitrogen has an Al concentration of 2×1019 cm−3 or less.

A semiconductor light-emitting device having a p-type semiconductor layer between an active layer containing nitrogen and a semiconductor substrate, a current confinement structure being formed by selective oxidation of a part of a selective oxidizing layer disposed in said p-type semiconductor layer and containing AlAs as a major component, wherein there is provided at least one layer of a GaInPAs layer, a GaInP layer and a GPAs layer between said selective oxidizing layer and said active layer containing nitrogen.

A semiconductor light emitting device having a p-type semiconductor layer between an active layer containing nitrogen and a semiconductor substrate, a current confinement structure being formed by selective oxidation of a part of a selective oxidizing layer containing AlAs as a major component disposed in said p-type semiconductor layer, wherein there is formed a semiconductor layer having a bandgap larger than that of said active layer and containing nitrogen between said selective oxidizing layer and said active layer containing nitrogen.

A surface-emission laser diode having a cavity structure, said cavity structure comprising an active region having an active layer containing nitrogen and an upper reflector and a lower reflector provided above and below said active layer for obtaining a laser light, a p-type semiconductor layer being provided between said active layer containing nitrogen and said semiconductor substrate, said lower reflector comprising a semiconductor distributed Bragg reflector having a periodic change of refractive index and reflecting an incident light by interference of optical waves, a layer of smaller refractive index of said semiconductor distributed Bragg reflector being formed of AlxGa1-xAs (0<x≦1) a layer of larger refractive index of said semiconductor distributed Bragg reflector being formed of AlyGa1-yAs (0≦y<x≦1) a selective oxidizing layer containing AlAs as a major component being formed for causing current confinement by selectively oxidizing a part of said p-type semiconductor layer, at least one layer of a GaInPAs layer, a GaInP layer and a GaPAs layer being formed between said selective oxidizing layer and said active layer containing nitrogen.

A surface-emission laser diode having a cavity structure, said cavity structure comprising an active layer having an active layer containing nitrogen and an upper reflector and a lower reflector provided respectively above and below said active layer for obtaining a laser light, a p-type semiconductor layer being formed between said active layer containing nitrogen and a semiconductor substrate, said lower reflector comprising a semiconductor distributed Bragg reflector having a periodical change of refractive index and reflecting an incident light by interference of optical waves, a layer of smaller refractive index of said semiconductor distributed Bragg reflector being formed of AlxGa1-xAs (0<x≦1), a layer of larger refractive index of said semiconductor distributed Bragg reflector being formed of AlyGa1-yAs (0≦y<x≦1), a selective oxidizing layer containing AlAs as a major component being formed for causing current confinement by selectively oxidizing a part of said p-type semiconductor layer, and there is formed a semiconductor layer having a bandgap larger than that of said active layer and containing nitrogen between said selective oxidizing layer and said active layer containing nitrogen.

A surface-emission laser array constructed by an array of plural surface-emission laser diodes, each of said plural surface-emission laser diodes having a cavity structure, said cavity structure comprising an active region having an active layer containing nitrogen and an upper reflector and a lower reflector provided respectively above and below said active layer for obtaining a laser light, a p-type semiconductor layer being formed between said active layer containing nitrogen and a semiconductor substrate, said lower reflector comprising a semiconductor distributed Bragg reflector having a periodical change of refractive index and reflecting an incident light by interference of light waves, a layer of smaller refractive index of said semiconductor distributed Bragg reflector being formed of AlxGa1-xAs (0<x≦1), a layer of larger refractive index of said semiconductor distributed Bragg reflector being formed of AlyGa1-yAs (0≦y<x≦1), there is formed a selective oxidizing layer containing AlAs as a major component for causing current confinement by selectively oxidizing a part of said p-type semiconductor layer, and there is formed, between said selective oxidizing layer and said active layer containing nitrogen, at least one layer of a GaInPAs layer, a GaInP layer or a GaPAs layer.

A surface-emission laser array constructed of an array of plural surface-emission laser diodes, said plural surface-emission laser diodes having a cavity structure, said cavity structure comprising an active region having an active layer containing nitrogen and an upper reflector and a lower reflector provided respectively above and below said active layer for obtaining a laser light, a p-type semiconductor layer being provided between said active layer containing nitrogen and a semiconductor substrate, said lower reflector comprising a semiconductor distributed Bragg reflector having a periodical change of refractive index and reflecting an incident light by interference of optical waves, a layer of smaller refractive index of said distributed Bragg reflector being formed of AlxGa1-xAs (0<x≦1), a layer of larger refractive index of said semiconductor distributed Bragg reflector being formed of AlyGa1-yAs (0≦y<x≦1), there is provided a selective oxidizing layer containing AlAs as a major component for causing current confinement by selectively oxidizing a part of said p-type semiconductor layer, and there is formed, between said selective oxidizing layer and said active layer containing nitrogen, a semiconductor layer having a bandgap larger than that of said active layer and containing nitrogen.

An optical source comprising a surface-emission laser diode, said surface-emission laser diode having a cavity structure, said cavity structure comprising an active region having an active layer containing nitrogen and an upper reflector and a lower reflector provided respectively above and below said active layer for obtaining a laser light, a p-type semiconductor layer being formed between said active layer containing nitrogen and a semiconductor substrate, said lower reflector comprising a semiconductor distributed Bragg reflector having a periodical changer of refractive index and reflecting an incident light by interference of optical waves, a layer of smaller refractive index of said semiconductor distributed Bragg reflector being formed of AlxGa1-xAs (0<x≦1) a layer of larger refractive index of said semiconductor distributed Bragg reflector being formed of AlyGa1-yAs (0≦y<x≦1), there is formed a selective oxidizing layer containing AlAs as a major component for causing current, confinement by selectively oxidizing a part of said p-type semiconductor layer, and there is formed at least one layer of a GaInPAs layer, a GaInP layer and a GPAs layer between said selective oxidizing layer and said active layer containing nitrogen.

An optical source, said optical source comprising a surface-emission laser diode having a cavity structure, said cavity structure comprising an active region having an active layer containing nitrogen and an upper reflector and a lower reflector provided respectively above and below said active layer for obtaining a laser light, a p-type semiconductor layer being formed between said active layer containing nitrogen and a semiconductor substrate, said lower reflector comprising a semiconductor distributed Bragg reflector having a periodical change of refractive index and reflecting an incident light by interference of optical waves, a layer of smaller refractive index of said semiconductor distributed Bragg reflector being formed of AlxGa1-xAs (0<x≦1), a layer of larger refractive index of said semiconductor distributed Bragg reflector comprising AlyGa1-yAs (0≦y<x≦1), there is formed a selective oxidizing layer containing AlAs as a major component for causing current confinement by selectively oxidizing a part of said p-type semiconductor layer, there is formed, between said selective oxidizing layer and said active layer containing nitrogen, a semiconductor layer having a bandgap larger than that of said active layer and containing nitrogen.

An optical source comprising a surface-emission laser array constructed by arraying plural surface-emission laser diodes, each of said plural surface-emission laser diodes having a cavity structure, said cavity structure comprising an active region having an active layer containing nitrogen and an upper reflector and a lower reflector provided respectively above and below said active layer for obtaining a laser light, a p-type semiconductor layer being formed between said active layer containing nitrogen and a semiconductor substrate, said lower reflector comprising a semiconductor distributed Bragg reflector having a periodical change of refractive index and reflecting an incident light by interference of optical waves, a layer of smaller refractive index of said semiconductor distributed Bragg reflector being formed of AlxGa1-xAs (0<x≦1), a layer of larger refractive index of said distributed Bragg reflector being formed of AlyGa1-yAs (0≦y<x≦1) , there is formed a selective oxidizing layer containing AlAs as a major component for causing current confinement by selectively oxidizing a part of said p-type semiconductor layer, and there is formed, between said selective oxidizing layer and said active layer containing nitrogen, at least one layer of any of a GaInPAs layer, a GaInP layer and a GaPAs layer.

An optical source comprising a surface-emission laser array constructed by arraying plural surface-emission laser diodes, said plural surface-emission laser diodes having a cavity structure, said cavity structure comprising an active region having an active layer containing nitrogen and an upper reflector and a lower reflector provided respectively above and below said active layer for obtaining a laser light, a p-type semiconductor layer being formed between said active layer containing nitrogen and a semiconductor substrate, said lower reflector comprising a semiconductor distributed Bragg reflector having a periodical change of refractive index and reflecting an incident light by interference of optical waves, a layer of smaller refractive index of said semiconductor distributed Bragg reflector being formed of AlxGa1xAs (0<x≦1), a layer of larger refractive index of said distributed Bragg reflector being formed of AlyGa1-yAs (0≦y<x≦1), there is formed a selective oxidizing layer containing AlAs as a major component for causing current confinement by selectively oxidizing a part of said p-type semiconductor layer, and there is formed, between said selective oxidizing layer and said active layer containing nitrogen, a semiconductor layer having a bandgap larger than that of said active layer and containing nitrogen.

An optical transmission module having an optical source,

• said optical source comprising a surface-emission laser diode having a cavity structure, said cavity structure comprising an active region having an active layer containing nitrogen and an upper reflector and a lower reflector respectively provided above and below said active layer for obtaining a laser light, a p-type semiconductor layer being formed between said active layer containing nitrogen and a semiconductor substrate, said lower reflector comprising a semiconductor distributed Bragg reflector having a periodical change of refractive index and reflecting an incident light by interference of optical waves, a layer of smaller refractive index of said semiconductor distributed Bragg reflector being formed of AlxGa1-xAs (0<x≦1), a layer of larger refractive index of said semiconductor distributed Bragg reflector being formed of AlyGa1-yAs (0≦y<x≦1), there is formed a selective oxidizing layer containing AlAs as a major component for causing current confinement by selectively oxidizing a part of said p-type semiconductor layer, and there is formed, between said selective oxidizing layer and said active layer containing nitrogen, at least one layer of a GaInPAs layer, a GaInP layer and a GaPAs layer.

An optical transmission module having an optical source,.

• said optical source comprising a surface-emission layer diode having a cavity structure, said cavity structure comprising an active region having an active layer containing nitrogen and an upper reflector and a lower reflector provided respectively above and below said active layer for obtaining a laser light, a p-type semiconductor layer being formed between said active layer containing nitrogen and a semiconductor substrate, said lower reflector comprising a semiconductor distributed Bragg reflector having a periodical change of refractive index and reflecting an incident light by interference of optical waves, a layer of smaller refractive index of said semiconductor distributed Bragg reflector being formed of AlxGa1-xAs (0<x≦1), a layer of larger refractive index of said semiconductor distributed Bragg reflector being formed of AlyGa1-yAs (0≦y<x≦1), there is formed a selective oxidizing layer containing AlAs as a major component for causing current confinement by selectively oxidizing a part of said p-type semiconductor layer, and there is formed, between said selective oxidizing layer and said active layer containing nitrogen, a semiconductor layer having a bandgap larger than that of said active layer and containing nitrogen.

An optical transmission module having an optical source comprising a surface emission laser array constructed by arraying plural surface-emission laser diodes,

• each of said surface-emission laser diodes having a cavity structure, said cavity structure comprising an active region having an active layer containing nitrogen and an upper reflector and a lower reflector provided respectively above and below said active layer for obtaining a laser light, a p-type semiconductor layer being formed between said active layer containing nitrogen and a semiconductor substrate, said lower reflector comprising a semiconductor distributed Bragg reflector having a periodical change of refractive index and reflecting an incident light by interference of optical waves, a layer of smaller refractive index of said semiconductor distributed Bragg reflector being formed of AlxGa1-xAs (0<x≦1)
• a layer of larger refractive of said semiconductor distributed Bragg reflector being formed of AlyGa1-yAs (0≦y<x≦1), there is formed a selective oxidizing layer containing AlAs as a major component and causing current confinement by selectively oxidizing a part of said p-type semiconductor layer, and there is formed, between said selective oxidizing layer and said active layer containing nitrogen, at least one layer of a GaInPAs layer, a GaInP layer and a GaPAs layer.

An optical transmission module having an optical source comprising a surface-emission laser array constructed by arraying plural surface-emission laser diodes,

• said plural surface emission laser diodes having a cavity structure, said cavity structure comprising an active region having an active layer containing nitrogen and an upper reflector and a lower reflector provided respectively above and below said active layer for obtaining a laser light, a p-type semiconductor layer being formed between said active layer containing nitrogen and a semiconductor substrate, said lower reflector comprising a semiconductor distributed Bragg reflector having a periodical change of refractive index and reflecting an incident light by interference of optical waves, a layer of smaller refractive index of said semiconductor Bragg reflector being formed of AlxGa1-xAs (0<x≦1), a layer of larger refractive index of said semiconductor Bragg reflector being formed of AlyGa1-yAs (0≦y<x≦1), there is formed a selective oxidizing:layer containing AlAs as a major component for causing current confinement by selectively oxidizing a part of said p-type semiconductor layer, and there is formed, between said selective oxidizing layer and said active layer containing nitrogen, a semiconductor layer having a bandgap larger than that of said active layer and containing nitrogen.

An optical transceiver module having an optical source,

• said optical source comprising a surface-emission laser diode having a cavity structure, said cavity structure comprising an active region having an active layer containing nitrogen and an upper reflector and a lower reflector respectively provided above and below said active layer for obtaining a laser light, a p-type semiconductor layer being formed between said active layer containing nitrogen and a semiconductor substrate, said lower reflector comprising a semiconductor distributed Bragg reflector having a periodical change of refractive index and reflecting an incident light by interference of optical waves, a layer of smaller refractive index of said semiconductor distributed Bragg reflector being formed of AlxGa1-xAs (0<x≦1), a layer of larger refractive index of said semiconductor distributed Bragg reflector being formed of AlyGa1-yAs (0≦y<x≦1), there is formed a selective oxidizing layer containing AlAs as a major component for causing current confinement by selectively oxidizing a part of said p-type semiconductor layer, and there is formed, between said selective oxidizing layer and said active layer containing nitrogen, at least one layer of a GaInPAs layer, a GaInP layer and a GaPAs layer.

An optical transceiver module having an optical source,

• said optical source comprising a surface-emission layer diode having a cavity structure, said cavity structure comprising an active region having an active layer containing nitrogen and an upper reflector and a lower reflector provided respectively above and below said active layer for obtaining a laser light, a p-type semiconductor layer being formed between said active layer containing nitrogen and a semiconductor substrate, said lower reflector comprising a semiconductor distributed Bragg reflector having a periodical change of refractive index and reflecting an incident light by interference of optical waves, a layer of smaller refractive index of said semiconductor distributed Bragg reflector being formed of AlxGa1-xAs (0<x≦1), a layer of larger refractive index of said semiconductor distributed Bragg reflector being formed of AlyGa1-yAs (0≦y<x≦1), there is formed a selective oxidizing layer containing AlAs as a major component for causing current confinement by selectively oxidizing a part of said p-type semiconductor layer, and there is formed, between said selective oxidizing layer and said active layer containing nitrogen, a semiconductor layer having a bandgap larger than that of said active layer and containing nitrogen.

An optical transceiver module having an optical source comprising a surface emission laser array constructed by arraying plural surface-emission laser diodes,

• each of said surface-emission laser diodes having a cavity structure, said cavity structure comprising an active region having an active layer containing nitrogen and an upper reflector and a lower reflector provided respectively above and below said active layer for obtaining a laser light, a p-type semiconductor layer being formed between said active layer containing nitrogen and a semiconductor substrate, said lower reflector comprising a semiconductor distributed Bragg reflector having a periodical change of refractive index and reflecting an incident light by interference of optical waves, a layer of smaller refractive index of said semiconductor distributed Bragg reflector being formed of AlxGa1-xAs (0<x≦1)
• a layer of larger refractive of said semiconductor distributed Bragg reflector being formed of AlyGa1-yAs (0≦y<x≦1), there is formed a selective oxidizing layer containing AlAs as a major component and causing current confinement by selectively oxidizing a part of said p-type semiconductor layer, and there is formed, between said selective oxidizing layer and said active layer containing nitrogen, at least one layer of a GaInPAs layer, a GaInP layer and a GaPAs layer.

An optical transceiver module having an optical source comprising a surface-emission laser array constructed by arraying plural surface-emission laser diodes,

• said plural surface emission laser diodes having a cavity structure, said cavity structure comprising an active region having an active layer containing nitrogen and an upper reflector and a lower reflector provided respectively above and below said active layer for obtaining a laser light, a p-type semiconductor layer being formed between said active layer containing nitrogen and a semiconductor substrate, said lower reflector comprising a semiconductor distributed Bragg reflector having a periodical change of refractive index and reflecting an incident light by interference of optical waves, a layer of smaller refractive index of said semiconductor Bragg reflector being formed of AlxGa1-xAs (0<x≦1), a layer of larger refractive index of said semiconductor Bragg reflector being formed of AlyGa1-yAs (0≦y<x≦1), there is formed a selective oxidizing layer containing AlAs as a major component for causing current confinement by selectively oxidizing a part of said p-type semiconductor layer, and there is formed, between said selective oxidizing layer and said active layer containing nitrogen, a semiconductor layer having a bandgap larger than that of said active layer and containing nitrogen.

An optical telecommunication system having an optical source,

• said optical source comprising a surface-emission laser diode having a cavity structure, said cavity structure comprising an active region having an active layer containing nitrogen and an upper reflector and a lower reflector respectively provided above and below said active layer for obtaining a laser light, a p-type semiconductor layer being formed between said active layer containing nitrogen and a semiconductor substrate, said lower reflector comprising a semiconductor distributed Bragg reflector having a periodical change of refractive index and reflecting an incident light by interference of optical waves, a layer of smaller refractive index of said semiconductor distributed Bragg reflector being formed of AlxGa1-xAs (0<x≦1) a layer of larger refractive index of said semiconductor distributed Bragg reflector being formed of AlyGa1-yAs (0≦y<x≦1), there is formed a selective oxidizing layer containing AlAs as a major component for causing current confinement by selectively oxidizing a part of said p-type semiconductor layer, and there is formed, between said selective oxidizing layer and said active layer containing nitrogen, at least one layer of a GaInPAs layer, a GaInP layer and a GaPAs layer.

An optical telecommunication system having an optical source,

• said optical source comprising a surface-emission layer diode having a cavity structure, said cavity structure comprising an active region having an active layer containing nitrogen and an upper reflector and a lower reflector provided respectively above and below said active layer for obtaining a laser light, a p-type semiconductor layer being formed between said active layer containing nitrogen and a semiconductor substrate, said lower reflector comprising a semiconductor distributed Bragg reflector having a periodical change of refractive index and reflecting an incident light by interference of optical waves, a layer of smaller refractive index of said semiconductor distributed Bragg reflector being formed of AlxGa1-xAs (0<x≦1) a layer of larger refractive index of said semiconductor distributed Bragg reflector being formed of AlyGa1-yAs (0≦y<x≦1), there is formed a selective oxidizing layer containing AlAs as a major component for causing current confinement by selectively oxidizing a part of said p-type semiconductor layer, and there is formed, between said selective oxidizing layer and said active layer containing nitrogen, a semiconductor layer having a bandgap larger than that of said active layer and containing nitrogen.

An optical telecommunication system having an optical source comprising a surface emission laser array constructed by arraying plural surface-emission laser diodes,

• each of said surface-emission laser diodes having a cavity structure, said cavity structure comprising an active region having an active layer containing nitrogen and an upper reflector and a lower reflector provided respectively above and below said active layer for obtaining a laser light, a p-type semiconductor layer being formed between said active layer containing nitrogen and a semiconductor substrate, said lower reflector comprising a semiconductor distributed Bragg reflector having a periodical change of refractive index and reflecting an incident light by interference of optical waves, a layer of smaller refractive index of said semiconductor distributed Bragg reflector being formed of AlxGa1-xAs (0<x≦1)
• a layer of larger refractive of said semiconductor distributed Bragg reflector being formed of AlyGa1-yAs (0≦y<x≦1), there is formed a selective oxidizing layer containing AlAs as a major component and causing current confinement by selectively oxidizing a part of said p-type semiconductor layer, and there is formed, between said selective oxidizing layer and said active layer containing nitrogen, at least one layer of a GaInPAs layer, a GaInP layer and a GaPAs layer.

An optical telecommunication system having an optical source comprising a surface-emission laser array constructed by arraying plural surface-emission laser diodes,

• said plural surface emission laser diodes having a cavity structure, said cavity structure comprising an active region having an active layer containing nitrogen and an upper reflector and a lower reflector provided respectively above and below said active layer for obtaining a laser light, a p-type semiconductor layer being formed between said active layer containing nitrogen and a semiconductor substrate, said lower reflector comprising a semiconductor distributed Bragg reflector having a periodical change of refractive index and reflecting an incident light by interference of optical waves, a layer of smaller refractive index of said semiconductor Bragg reflector being formed of AlxGa1-xAs (0<x≦1), a layer of larger refractive index of said semiconductor Bragg reflector being formed of AlyGa1-yAs (0≦y<x≦1), there is formed a selective oxidizing layer containing AlAs as a major component for causing current confinement by selectively oxidizing a part of said p-type semiconductor layer, and there is formed, between said selective oxidizing layer and said active layer containing nitrogen, a semiconductor layer having a bandgap larger than that of said active layer and containing nitrogen.

A method of fabricating a semiconductor light emitting device having a semiconductor layer containing Al provided between a substrate and an active layer, by providing a step of removing-at least one of an Al source, an Al reactant, an Al compound and Al remaining in a growth chamber by supplying, after a growth of said semiconductor layer containing Al but before starting growth of said active layer containing nitrogen, a gas containing bromine to said growth chamber as an etching gas.