H01J 2237/0045
Using secondary electrons
Official title: using secondary electrons
H01J2237/0045 (Using secondary electrons) appears on 33 US grants and 26 published applications in this corpus.
Search patents in H01J- Granted patents
- 33
- Published applications
- 26
- Assignees
- 22
- Inventors
- 83
- Latest grant
- 22 Oct 2024
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1991 | 1 | 0 |
| 1992 | 2 | 0 |
| 1993 | 0 | 0 |
| 1994 | 2 | 0 |
| 1995 | 2 | 0 |
| 1996 | 1 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 1 | 0 |
| 2002 | 1 | 0 |
| 2003 | 1 | 0 |
| 2004 | 0 | 3 |
| 2005 | 2 | 2 |
| 2006 | 1 | 2 |
| 2007 | 1 | 2 |
| 2008 | 2 | 2 |
| 2009 | 2 | 1 |
| 2010 | 2 | 1 |
| 2011 | 1 | 1 |
| 2012 | 1 | 2 |
| 2013 | 2 | 0 |
| 2014 | 2 | 1 |
| 2015 | 2 | 2 |
| 2016 | 0 | 0 |
| 2017 | 0 | 0 |
| 2018 | 0 | 1 |
| 2019 | 1 | 1 |
| 2020 | 0 | 0 |
| 2021 | 0 | 0 |
| 2022 | 0 | 0 |
| 2023 | 1 | 3 |
| 2024 | 2 | 2 |
By publication year. Applications have been published since 2001.
Recent patents
- Ion implantation system22 Oct 2024US 12,125,665 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Methods and systems including pulsed dual-beam charge neutralization27 Feb 2024US 11,915,901 B2Ulvac-Phi, Inc.
- System and method for reducing the charging effect in a transmission electron microscope system1 Aug 2023US 11,715,618 B2FEI Company
- Ion implanter and ion implantation method2 Apr 2019US 10,249,477 B2Sumitomo Heavy Industries Ion Technology Co., Ltd.
- System and method for controlling charge-up in an electron beam apparatus7 Apr 2015US 9,000,369 B2Hermes Microvision, Inc.
- Ion implantation system14 Nov 2024US 2024/0379321 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Electron beam writing apparatus and electron beam writing method14 Mar 2024US 2024/0087845 A1NuFlare Technology, Inc.
- Ion implantation system16 Nov 2023US 2023/0369009 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Methods and systems including pulsed dual-beam charge neutralization3 Aug 2023US 2023/0245848 A1Ulvac-Phi, Inc.
- System and method for reducing the charging effect in a transmission electron microscope system9 Feb 2023US 2023/0040558 A1FEI Company
Most cited
By later US patents
- Ion implantation with charge neutralization72US 6,271,529 B1Ebara Corporation · 2001
- Plasma flood system for the reduction of charging of wafers during ion implantation44US 5,399,871 AAPPLIED Materials.Inc. · 1995
- Charged particle beam system29US 6,979,822 B1FEI Company · 2005
- Method and apparatus for control of surface potential26US 5,432,345 A1995
- Scanning electron microscope with voltage applied to the sample23US 6,635,873 B1Hitachi, Ltd. · 2003