H01F 41/302
For applying spin-exchange-coupled multilayers
Official title: {for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices (spin-exchange-coupled multilayers H01F10/32)}
H01F41/302 (For applying spin-exchange-coupled multilayers) appears on 1,144 US grants and 1,189 published applications in this corpus.
Search patents in H01F- Granted patents
- 1,144
- Published applications
- 1,189
- Assignees
- 245
- Inventors
- 1,514
- Latest grant
- 4 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1990 | 1 | 0 |
| 1991 | 1 | 0 |
| 1992 | 2 | 0 |
| 1993 | 1 | 0 |
| 1994 | 2 | 0 |
| 1995 | 3 | 0 |
| 1996 | 10 | 0 |
| 1997 | 4 | 0 |
| 1998 | 16 | 0 |
| 1999 | 8 | 0 |
| 2000 | 17 | 0 |
| 2001 | 22 | 14 |
| 2002 | 34 | 45 |
| 2003 | 38 | 62 |
| 2004 | 53 | 88 |
| 2005 | 52 | 68 |
| 2006 | 58 | 70 |
| 2007 | 56 | 58 |
| 2008 | 43 | 80 |
| 2009 | 50 | 55 |
| 2010 | 44 | 50 |
| 2011 | 59 | 56 |
| 2012 | 57 | 54 |
| 2013 | 60 | 50 |
| 2014 | 41 | 43 |
| 2015 | 43 | 34 |
| 2016 | 35 | 26 |
| 2017 | 31 | 23 |
| 2018 | 16 | 23 |
| 2019 | 44 | 60 |
| 2020 | 47 | 72 |
| 2021 | 54 | 55 |
| 2022 | 39 | 35 |
| 2023 | 43 | 29 |
| 2024 | 31 | 21 |
| 2025 | 23 | 14 |
| 2026 | 6 | 4 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Magnetic memory devices having a low switching voltage4 Aug 2026US 12,701,925 B2Northwestern University
- Method for forming a MAMR structure based on a TMR—Spin Torque oscillator (STO) having seed layer and capping layer of metal oxide14 Jul 2026US 12,685,026 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Rare-earth ion doped thin film technologies30 Jun 2026US 12,668,889 B2The University of Chicago
- Method for producing a printed magnetic functional element, and printed magnetic functional element9 Jun 2026US 12,651,699 B2Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e. V.
- MRAM fabrication and device17 Mar 2026US 12,581,863 B2Taiwan Semiconductor Manufacturing Company.Ltd
- MRAM Fabrication and Device25 Jun 2026US 2026/0182253 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Magnetic tunnel junction (mtj) element and its fabrication process18 Jun 2026US 2026/0173766 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method for manufacturing magnetic laminated body and magnetic sensor, and apparatus for manufacturing magnetic laminated body7 May 2026US 2026/0128202 A1TDK Corporation
- Magnetic tunneling junction with synthetic free layer for sot-mram7 May 2026US 2026/0130121 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Crystal seed layer for magnetic random access memory (mram)6 Nov 2025US 2025/0342874 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization315US 6,992,359 B2Grandis, Inc. · 2006
- Magnetic element utilizing spin transfer and an MRAM device using the magnetic element308US 6,714,444 B2Grandis, Inc. · 2004
- Perpendicular magnetization magnetic element utilizing spin transfer241US 6,967,863 B2Grandis, Inc. · 2005
- Thermally stable magnetic elements utilizing spin transfer and an MRAM device using the magnetic element213US 6,838,740 B2Grandis, Inc. · 2005
- MRAM sense layer area control205US 6,852,550 B2Micron Technology, Inc. · 2005