Rare-earth ion doped thin film technologies
AssigneeThe University of Chicago
InventorsManish Singh, Tian Zhong, Supratik Guha
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Abstract
The present disclosure includes a thin film assembly comprising a substrate and an epitaxial crystalline thin film disposed on the substrate, wherein the epitaxial crystalline thin film is a single crystal, wherein at least a portion of the epitaxial crystalline thin film is doped with rare-earth ions at a concentration of less than 100 parts per billion. The disclosure further includes a method of manufacturing a thin film assembly, the method comprising creating, on a substrate and with use of molecular beam epitaxy, an epitaxial crystalline thin film doped with the rare-earth ions at a concentration of less than 100 parts per billion.
Claims8
A thin film assembly comprising:
- a substrate;
- and
- an epitaxial crystalline thin film disposed on the substrate, wherein the epitaxial crystalline thin film comprises a rare-earth oxide,
- wherein the epitaxial crystalline thin film is a single crystal,
- wherein at least a portion of the epitaxial crystalline thin film is doped with rare-earth ions;
- wherein the epitaxial crystalline thin film comprises:
- a first undoped buffer epitaxial crystalline thin film on the substrate;
- a doped epitaxial crystalline thin film on the first undoped buffer epitaxial crystalline thin film, wherein the doped epitaxial crystalline thin film is doped with the rare-earth ions at a concentration of less than 100 parts per billion;
- and
- a second undoped buffer epitaxial crystalline thin film on the doped epitaxial crystalline thin film;
- wherein the first undoped buffer epitaxial crystalline thin film is at least 100 nanometers thick, and the second undoped buffer epitaxial crystalline thin film is at least 100 nanometers thick.
Dependencies are inferred from the claim text.