H01F 41/305
Applying the spacer or adjusting its interface
Official title: {applying the spacer or adjusting its interface, e.g. in order to enable particular effect different from exchange coupling}
H01F41/305 (Applying the spacer or adjusting its interface) appears on 367 US grants and 417 published applications in this corpus.
Search patents in H01F- Granted patents
- 367
- Published applications
- 417
- Assignees
- 113
- Inventors
- 589
- Latest grant
- 14 Jul 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1999 | 1 | 0 |
| 2000 | 2 | 0 |
| 2001 | 4 | 1 |
| 2002 | 4 | 10 |
| 2003 | 4 | 7 |
| 2004 | 8 | 13 |
| 2005 | 8 | 9 |
| 2006 | 6 | 17 |
| 2007 | 13 | 14 |
| 2008 | 11 | 26 |
| 2009 | 9 | 25 |
| 2010 | 15 | 29 |
| 2011 | 26 | 37 |
| 2012 | 32 | 26 |
| 2013 | 30 | 26 |
| 2014 | 21 | 21 |
| 2015 | 22 | 13 |
| 2016 | 15 | 7 |
| 2017 | 12 | 12 |
| 2018 | 5 | 8 |
| 2019 | 19 | 26 |
| 2020 | 22 | 26 |
| 2021 | 17 | 19 |
| 2022 | 15 | 14 |
| 2023 | 19 | 12 |
| 2024 | 14 | 11 |
| 2025 | 10 | 6 |
| 2026 | 3 | 2 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Method for forming a MAMR structure based on a TMR—Spin Torque oscillator (STO) having seed layer and capping layer of metal oxide14 Jul 2026US 12,685,026 B2Taiwan Semiconductor Manufacturing Company.Ltd
- MRAM fabrication and device17 Mar 2026US 12,581,863 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Magnetic tunnel junction (MTJ) element and its fabrication process10 Mar 2026US 12,575,334 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Method for forming a perpendicular spin torque oscillator (PSTO) including forming a magneto resistive sensor (MR) over a spin torque oscillator (STO)9 Sep 2025US 12,414,476 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method for fabricating the same12 Aug 2025US 12,389,807 B2United Microelectronics Corp.
- MRAM Fabrication and Device25 Jun 2026US 2026/0182253 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Magnetic tunnel junction (mtj) element and its fabrication process18 Jun 2026US 2026/0173766 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Magnetic tunneling junction device and memory device including the same6 Nov 2025US 2025/0344609 A1Samsung Electronics Co., Ltd.
- Semiconductor device and method for fabricating the same6 Nov 2025US 2025/0344612 A1United Microelectronics Corp.
- Magnetic tunneling junction device and memory device including the same14 Aug 2025US 2025/0261565 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Method and system for providing a magnetoresistive structure164US 8,545,999 B1Western Digital (Fremont), LLC · 2013
- Method and system for providing a spin tunneling magnetic element having a crystalline barrier layer156US 7,695,761 B1Western Digital (Fremont), LLC · 2010
- Method for providing a magnetic recording transducer148US 8,381,391 B2Western Digital (Fremont), LLC · 2013
- Method and system for providing a spin tunneling magnetic element having a crystalline barrier layer147US 8,547,730 B1Western Digital (Fremont), LLC · 2013
- Method and apparatus for controlling magnetostriction in a spin valve sensor146US 7,318,947 B1Western Digital (Fremont), LLC · 2008