Back to results
US 12,389,807 B2Granted
Semiconductor device and method for fabricating the same
AssigneeUnited Microelectronics Corp.
InventorsJin-Yan Chiou, Wei-Chuan Tsai, Hsin-Fu Huang, Yen-Tsai Yi, Hsiang-Wen Ke
Life of this patent
Estimating the term…
Abstract
A method for fabricating a semiconductor device includes the steps of: forming a first inter-metal dielectric (IMD) layer on a substrate; forming a contact hole in the first IMD layer; forming a bottom electrode layer in the contact hole; forming a magnetic tunneling junction (MTJ) stack on the bottom electrode layer; and removing the MTJ stack and the bottom electrode layer to form a MTJ on a bottom electrode. Preferably, the bottom electrode protrudes above a top surface of the first IMD layer.
Claims9
A method for fabricating a semiconductor device, comprising:
- forming a first inter-metal dielectric (IMD) layer on a substrate;
- forming a contact hole in the first IMD layer;
- forming a liner in the contact hole;
- forming a bottom electrode layer on the liner in the contact hole;
- forming a magnetic tunneling junction (MTJ) stack on the bottom electrode layer;
- and
- removing the MTJ stack, the bottom electrode layer, and the liner to form a MTJ on a bottom electrode, wherein the liner comprises a vertical portion, a sidewall of the MTJ is aligned with a sidewall of the vertical portion, and a top surface of the vertical portion is higher than a top surface of the first IMD layer.
4 more elements
Dependencies are inferred from the claim text.