Method for forming a MAMR structure based on a TMR—Spin Torque oscillator (STO) having seed layer and capping layer of metal oxide

A method, comprising:

• providing a main pole;
• forming a first metal oxide layer adjacent a side of the main pole;
• forming a magnetic layer adjacent the first metal oxide layer;
• forming a non-magnetic layer adjacent the magnetic layer and opposite the first metal oxide layer;
• forming a high moment magnetic layer adjacent the non-magnetic layer and opposite the magnetic layer;
• forming a second metal oxide layer adjacent the high moment magnetic layer and opposite the non-magnetic layer, and
• forming a write shield adjacent the second metal oxide layer and opposite the high moment magnetic layer;
• wherein forming one or both of the first metal oxide layer and the second metal oxide layer comprises:
• forming a first magnesium layer;
• performing a passive oxidation process that partially oxidizes the first magnesium layer;
• forming a second magnesium layer over the partially oxidized first magnesium layer;
• performing a second oxidation process to fully oxidize the second magnesium layer;
• performing a first annealing process during deposition of a third magnesium layer over the fully oxidized second magnesium layer;
• and
• after performing the first annealing process, performing a second annealing process.

A method, comprising:

• providing a soft underlayer and a medium bit layer disposed on the soft underlayer;
• providing a main pole;
• forming a spin torque oscillator (STO) adjacent to the main pole, wherein forming the STO includes:
• forming a first non-magnetic layer adjacent a side of the main pole;
• forming a magnetic layer adjacent the first non-magnetic layer;
• forming a second non-magnetic layer adjacent the magnetic layer and opposite the first non-magnetic layer;
• forming a high moment magnetic layer adjacent the second non-magnetic layer and opposite the magnetic layer;
• and
• forming a metal oxide layer adjacent the high moment magnetic layer and opposite the second non-magnetic layer, wherein forming the metal oxide layer includes:
• forming a first magnesium layer;
• performing a passive oxidation process that partially oxidizes the first magnesium layer;
• forming a second magnesium layer over the partially oxidized first magnesium layer;
• performing a second oxidation process to fully oxidize the second magnesium layer;
• performing a first annealing process during deposition of a third magnesium layer over the fully oxidized second magnesium layer;
• and
• after performing the first annealing process during deposition of the third magnesium layer, performing a second annealing process;
• and
• forming a write shield adjacent the metal oxide layer and opposite the high moment magnetic layer.